PLASMA PROCESSING APPARATUS, ABNORMAL OSCILLATION DETERMINATION METHOD AND HIGH-FREQUENCY GENERATOR
    31.
    发明申请
    PLASMA PROCESSING APPARATUS, ABNORMAL OSCILLATION DETERMINATION METHOD AND HIGH-FREQUENCY GENERATOR 有权
    等离子体处理装置,异常振荡测定方法和高频发生器

    公开(公告)号:US20150022086A1

    公开(公告)日:2015-01-22

    申请号:US14333691

    申请日:2014-07-17

    Abstract: Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

    Abstract translation: 一种等离子体处理装置,包括:处理容器; 等离子体产生机构,包括高频振荡器,并且被配置为通过使用由所述高频振荡器振荡的高频波在所述处理容器内产生等离子体; 阻抗调节器,被配置为调节要施加到所述高频振荡器的阻抗; 以及确定单元,被配置为改变要由阻抗调节器调节的阻抗,并且基于作为由高频振荡的高频波的基波的中心频率的分量来确定高频振荡器的异常振荡 频率振荡器和在阻抗变化的状态下以基波的中心频率为中心的预定频带的两端存在的外围频率的分量。

    MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE
    32.
    发明申请
    MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE 有权
    微波等离子体加工设备,天线和半导体器件

    公开(公告)号:US20150013911A1

    公开(公告)日:2015-01-15

    申请号:US14326647

    申请日:2014-07-09

    CPC classification number: H01J37/32522 H01J37/3222

    Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor.

    Abstract translation: 公开了一种微波等离子体处理装置。 微波等离子体处理装置包括安装在通孔中的同轴波导,其形成在中间金属体的中心侧部分中,以连续延伸穿过冷却板和中间金属板。 同轴波导包括内部导体,中间导体和外部导体。 安装在中间导体的中空部分的内部导体与中间导体之间的空间和安装在外部导体的中空部分的中间导体与外部导体之间的空间中的每一个都传输微波。 外导体的内径和中间导体的外径之间的差大于内导体的外径和中间导体的内径之间的差。

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