公开(公告)号：US20160268101A1

公开(公告)日：2016-09-15

申请号：US15064698

申请日：2016-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Hideo KATO ,  Kazunori FUNAZAKI ,  Yuji OTSUKA ,  Shinji KAWADA

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/32229 ,  H01J37/32917

Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Abstract translation: 微波自动匹配器包括可移动体，驱动单元，匹配控制单元，反射系数测量单元和设置单元。 匹配控制单元在对于等离子体处理进行的匹配操作中，使可移动体从一个方向的起始位置连续地移动开始位置和目标位置之间的差的距离，然后可变地控制可移动体的位置 直到通过监视反射系数的测量，由反射系数测量单元获得的反射系数的测量落入第一相邻范围内。

公开(公告)号：US20150022086A1

公开(公告)日：2015-01-22

申请号：US14333691

申请日：2014-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Kazunori FUNAZAKI ,  Yunosuke HASHIMOTO

IPC: H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32311 ,  H01J37/32935 ,  H05H2001/4682

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract translation: 一种等离子体处理装置，包括：处理容器; 等离子体产生机构，包括高频振荡器，并且被配置为通过使用由所述高频振荡器振荡的高频波在所述处理容器内产生等离子体; 阻抗调节器，被配置为调节要施加到所述高频振荡器的阻抗; 以及确定单元，被配置为改变要由阻抗调节器调节的阻抗，并且基于作为由高频振荡的高频波的基波的中心频率的分量来确定高频振荡器的异常振荡 频率振荡器和在阻抗变化的状态下以基波的中心频率为中心的预定频带的两端存在的外围频率的分量。