公开(公告)号：US12014907B2

公开(公告)日：2024-06-18

申请号：US17593220

申请日：2020-02-26

申请人： Tokyo Electron Limited

发明人： Ryota Ifuku ,  Takashi Matsumoto ,  Masahito Sugiura

IPC分类号： H01L21/31 ,  C23C16/02 ,  C23C16/26 ,  C23C16/511 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01J37/32724 ,  C23C16/0218 ,  C23C16/26 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/28556 ,  H01J2237/3321 ,  H01L21/02444 ,  H01L21/02658

摘要： A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

公开(公告)号：US20240186114A1

公开(公告)日：2024-06-06

申请号：US18515120

申请日：2023-11-20

申请人： TOKYO ELECTRON LIMITED

发明人： Kazushi KANEKO ,  Satoru Kawakami ,  Hiroshi Kondo ,  Eiki Kamata ,  Shin Oowada

IPC分类号： H01J37/32

CPC分类号： H01J37/32247 ,  H01J37/3222 ,  H01J37/32449

摘要： Provided is a plasma processing apparatus comprising a processing container configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface thereof facing the processing space; an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric; and a resonator array structure located along the first surface of the dielectric within the processing container, wherein the resonator array structure includes a base plate having a groove on a surface on the processing space side; a plurality of resonators capable of resonating with a magnetic field component of the electromagnetic wave and having a size smaller than a wavelength of the electromagnetic wave; and a pressing member configured to press the plurality of resonators.

公开(公告)号：US11967485B2

公开(公告)日：2024-04-23

申请号：US17083709

申请日：2020-10-29

申请人： Tokyo Electron Limited

发明人： Eiki Kamata ,  Taro Ikeda ,  Mikio Sato ,  Nobuhiko Yamamoto

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32238 ,  H05H1/46

摘要： There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

公开(公告)号：US11887815B2

公开(公告)日：2024-01-30

申请号：US17307691

申请日：2021-05-04

申请人： Tokyo Electron Limited

发明人： Yunho Kim ,  Yanxiang Shi ,  Mingmei Wang

IPC分类号： H01J37/32 ,  H01J37/18 ,  H01L21/67

CPC分类号： H01J37/32266 ,  H01J37/18 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/32091 ,  H01J37/32119 ,  H01J37/32229 ,  H01J37/32715 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

摘要： In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes a microwave source coupled to a microwave oscillator, and a conductive spatial uniformity component including a plurality of through openings, where the conductive spatial uniformity component includes a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

公开(公告)号：US20230326716A1

公开(公告)日：2023-10-12

申请号：US18042513

申请日：2021-08-16

申请人： Tokyo Electron Limited

发明人： Eiki KAMATA ,  Hiroshi KANEKO ,  Taro IKEDA

IPC分类号： H01J37/32

CPC分类号： H01J37/32119 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/32201 ,  H01J37/3244

摘要： A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

公开(公告)号：US11735397B2

公开(公告)日：2023-08-22

申请号：US17222937

申请日：2021-04-05

申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

发明人： Hyo Chang Lee ,  Jung Hyung Kim ,  Hee Jung Yeom

IPC分类号： H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32311 ,  H01J37/32935 ,  H01J2237/24585

摘要： Disclosed herein is a device for measuring a plasma ion density, which includes a transceiver antenna configured to apply and receive a microwave, of which a frequency is varied, to and from plasma, and a frequency analyzer configured to analyze a frequency of the microwave received from the transceiver antenna and measure a cut-off frequency, wherein the frequency of the microwave applied to the plasma is varied in the range of 100 kHz to 500 MHz.

公开(公告)号：US20230260756A1

公开(公告)日：2023-08-17

申请号：US18306455

申请日：2023-04-25

申请人： Hangzhou Dianzi University

发明人： Jie Liu ,  Liping Yan ,  Zhiqun Cheng ,  Tiansong Deng

IPC分类号： H01J37/32 ,  C23C16/511 ,  C23C16/27

CPC分类号： H01J37/32266 ,  H01J37/32229 ,  H01J37/32715 ,  H01J37/32256 ,  H01J37/3222 ,  C23C16/511 ,  C23C16/274 ,  H01J2237/332 ,  H01J2237/24585 ,  H01J2237/002 ,  H01J37/32201

摘要： Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

公开(公告)号：US20230238217A1

公开(公告)日：2023-07-27

申请号：US18156618

申请日：2023-01-19

申请人： Tokyo Electron Limited

发明人： Koji KOTANI ,  Eiki KAMATA ,  Taro IKEDA

IPC分类号： H01J37/32

CPC分类号： H01J37/32238 ,  H01J37/3222

摘要： A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.

公开(公告)号：US20230207273A1

公开(公告)日：2023-06-29

申请号：US17926271

申请日：2021-03-25

申请人： Muegge GmbH

发明人： Moritz Johann GORATH

IPC分类号： H01J37/32 ,  H05B6/78 ,  H05B6/76 ,  H05B6/72 ,  H05B6/68

CPC分类号： H01J37/3222 ,  H05B6/782 ,  H05B6/76 ,  H05B6/72 ,  H05B6/68 ,  H01J37/32311 ,  H05B2206/044

摘要： A microwave treatment device comprises a treatment chamber, in which an object to be treated can be arranged, and a microwave emission device, by which microwave radiation can be radiated into the treatment chamber or emitted therein. The microwave emission device comprises at least one array antenna with a plurality of individual emitters and a microwave control device which can be used to specify an emission characteristic for each individual emitter of the at least one array antenna. A phase and/or amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. A phase and/or an amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. Furthermore, a frequency of the microwave emission can be specified within a frequency range for each individual emitter by the microwave device.

公开(公告)号：US20180151332A1

公开(公告)日：2018-05-31

申请号：US15821588

申请日：2017-11-22

申请人： TOKYO ELECTRON LIMITED

发明人： Kazushi KANEKO ,  Takashi HASEGAWA ,  Koji KOYAMA ,  Naoki MATSUMOTO

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32 ,  H01J37/3222 ,  H01J37/32275 ,  H01J37/32311 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/006 ,  H01J2237/1825 ,  H01J2237/186

摘要： A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.