公开(公告)号：US5595627A

公开(公告)日：1997-01-21

申请号：US597563

申请日：1996-02-02

申请人： Koichiro Inazawa ,  Shin Okamoto ,  Hisataka Hayashi ,  Takaya Matsushita

发明人： Koichiro Inazawa ,  Shin Okamoto ,  Hisataka Hayashi ,  Takaya Matsushita

IPC分类号： H05H1/46 ,  C23F4/00 ,  C30B33/12 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00 ,  C09K13/00

CPC分类号： H01L21/31116

摘要： A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO.sub.2 layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO.sub.2 layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C.sub.4 F.sub.8 and CO. To set the etching selection ratio of SiO.sub.2 /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C.sub.4 F.sub.8 is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.

摘要翻译： 等离子体蚀刻装置具有用于在处理室中支撑半导体晶片的下电极，与下电极相对的上电极，以及用于在上电极和下电极上施加RF电力的RF电源。 作为具有肩部的底层的SiN层和覆盖SiN层的SiO 2层设置在晶片上。 通过蚀刻在SiO 2层中形成接触孔，以露出SiN层的肩部。 处理气体含有C4F8和CO。为了设定SiO 2 / SiN的蚀刻选择比，使用处理气体的各部分的排出持续时间作为参数。 通过选择放电持续时间控制C4F8的离解进程。 放电持续时间由处理气体的每个部分的停留时间和RF功率的施加时间决定。