Learning method for neural network having discrete interconnection
strengths
    31.
    发明授权
    Learning method for neural network having discrete interconnection strengths 失效
    具有离散互连强度的神经网络的学习方法

    公开(公告)号:US5644681A

    公开(公告)日:1997-07-01

    申请号:US363597

    申请日:1994-12-23

    IPC分类号: G06N3/08 G06F15/18

    CPC分类号: G06N3/08

    摘要: A learning method for a neural network, in which at least a portion of the interconnection strength between neurons takes discrete values, includes the steps of updating an imaginary interconnection strength taking continuous values by using the quantity of update of the interconnection strength which has been calculated by using the discrete interconnection strength, and discretizing the imaginary interconnection strength so as to provide a novel interconnection strength.

    摘要翻译: 一种用于神经网络的学习方法,其中神经元中的至少一部分互连强度取离散值,包括以下步骤:通过使用已计算的互连强度的更新量来更新取连续值的虚拟互连强度 通过使用离散互连强度,并离散虚拟互连强度,以提供新颖的互连强度。

    Optical logic element with short switching time
    32.
    发明授权
    Optical logic element with short switching time 失效
    开关时间短的光逻辑元件

    公开(公告)号:US4999688A

    公开(公告)日:1991-03-12

    申请号:US475994

    申请日:1990-01-06

    摘要: An optical logic element includes an optical bistable npnp element for switching from a high resistance state to a low resistance state in response to electrical bias and incident light energy in which the switching time becomes shorter as the incident light energy becomes larger. The elements emit light in the low resistance on state. The optical logic element is designed for analog threshold processing of light energy. A plurality of optical bistable elements connected in parallel differentially threshold process incident light energy. An opto-electronic conversion apparatus includes linear arrays of light emitting elements, a two-dimensional array of optical memories, i.e., optical bistable elements, and linear light receiving element arrays arranged transverse to the light emitting element arrays, all integrated with each other. Corresponding light emitting elements, optical memories, and light receiving elements permit arbitrary transfers of signals. Periodic refresh light pulses maintain each optical memory in an established state.

    摘要翻译: 光学逻辑元件包括用于响应于入射光能量变大而使开关时间变短的电偏压和入射光能量从高电阻状态切换到低电阻状态的光学双稳态npnp元件。 元件在低电阻开状态下发光。 光逻辑元件设计用于光能的模拟阈值处理。 并联连接的多个光学双稳态元件,差分阈值处理入射光能量。 光电转换装置包括发光元件的线性阵列,光学存储器的二维阵列,即光学双稳态元件和横向于发光元件阵列布置的线性光接收元件阵列,它们彼此整合。 相应的发光元件,光存储器和光接收元件允许信号的任意传送。 周期性刷新光脉冲将每个光学存储器保持在建立状态。

    Semiconductor laser device
    33.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号:US4888783A

    公开(公告)日:1989-12-19

    申请号:US169472

    申请日:1988-03-17

    摘要: In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.

    摘要翻译: 在其中通过入射光控制激光振荡状态的光响应半导体器件中,具有可由光调制的导电性的材料层集成在半导体激光器结构中并且响应入射光以控制激光振荡 设备状态 在构成光逻辑元件的一个实施例中,多个半导体激光器集成在基板上,每个相应的半导体激光器具有沿整个或其一部分的光栅,并且设置有与相邻半导体激光器的波导连接的光波导。 在双稳半导体激光器中,提供了两个不同的导电型光限制层,包括位于两个光限制层之间的多量子阱结构的有源层,靠近量子阱活性层提供的光栅。 由光栅建立的振荡波长比由量子阱活性层产生的峰值增益波长短。

    Surface-emitting semiconductor laser device
    34.
    发明授权
    Surface-emitting semiconductor laser device 失效
    表面发射半导体激光器件

    公开(公告)号:US4847844A

    公开(公告)日:1989-07-11

    申请号:US148475

    申请日:1988-01-26

    IPC分类号: H01S5/00 H01S5/187

    CPC分类号: H01S5/187

    摘要: A surface-emitting semiconductor laser device comprises a first electrode, a first-conductivity-type clad layer provided on the first electrode, an active layer provided on the first-conductivity-type clad layer, a guide layer provided on the active layer and having an even-numbered-order diffraction grating opposite to the active layer, a second-conductivity-type clad layer provided on the guide layer, contact layers provided on portions of the second-conductivity-type clad layer, and second electrodes provided on the contact layers.

    摘要翻译: 表面发射半导体激光器件包括第一电极,设置在第一电极上的第一导电型覆盖层,设置在第一导电型覆盖层上的有源层,设置在有源层上的引导层,并具有 与有源层相反的偶数级衍射光栅,设置在引导层上的第二导电型覆盖层,设置在第二导电型覆盖层的部分上的接触层和设置在触点上的第二电极 层。