Cleaved Coupled Cavity AMQ Diode Configuration for Wide-Range Tunable Lasers

    公开(公告)号:US20240332899A1

    公开(公告)日:2024-10-03

    申请号:US18191966

    申请日:2023-03-29

    发明人: Hesham M. ENSHASY

    摘要: A continuously electronically tunable semiconductor laser has a lasing section, and first and second control sections separated from the lasing section by air gaps in a longitudinal arrangement. The longitudinal arrangement positions the lasing section between the two control sections, with the longitudinal arrangement corresponding to a lasing direction of the lasing section. The arrangement places longitudinal modes of the semiconductor laser in common with the longitudinal arrangement of the sections. Current is provided to each of the first and second control sections and the lasing section. Tuning is achieved by varying the current provided to at least one of the first control section, the second control section and the lasing section.

    Laser assembly, spectrometer and method for operating a laser

    公开(公告)号:US11916354B2

    公开(公告)日:2024-02-27

    申请号:US17266374

    申请日:2019-08-09

    摘要: A laser assembly comprising: a semiconductor laser with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in a standing wave cavity; a DC source coupled to the standing wave cavity; and an AC injection device for injecting an electrical AC signal within a range and/or within an integer multiple of the range into the standing wave cavity, the range within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and second electric contact section extending along a first longitudinal side of the longitudinal extension of the standing wave cavity, the AC injection device coupled to the first and/or second electric contact section such that the complex amplitude of the electrical AC signal differs for the first and second longitudinal electric contact section.

    Non-linear vertical-cavity surface-emitting laser equalization
    3.
    发明授权
    Non-linear vertical-cavity surface-emitting laser equalization 有权
    非线性垂直腔表面发射激光均衡

    公开(公告)号:US09059557B2

    公开(公告)日:2015-06-16

    申请号:US14502864

    申请日:2014-09-30

    摘要: Technologies are generally described for implementing non-linear VCSEL equalization. In some examples, a rising edge tap parameter, a falling edge tap parameter, an equalization delay and a bias current may be used to equalize a data signal to be output from a VCSEL. A VCSEL model may be used to derive a VCSEL response to one or more isolated data pulses. The derived response may then be used to determine the rising and falling edge tap parameters and an equalization delay, based on a bias current value for the VCSEL and a data rate associated with the data signal. The data signal may then be adjusted based on the equalization delay and the rising and falling edge tap parameter and sent to the VCSEL for output. At the same time, the VCSEL may be biased with a bias current having the bias current value.

    摘要翻译: 通常描述了用于实现非线性VCSEL均衡的技术。 在一些示例中,可以使用上升沿抽头参数,下降沿抽头参数,均衡延迟和偏置电流来均衡要从VCSEL输出的数据信号。 可以使用VCSEL模型来导出对一个或多个隔离数据脉冲的VCSEL响应。 然后,导出的响应可以用于基于VCSEL的偏置电流值和与数据信号相关联的数据速率来确定上升沿和下降沿抽头参数以及均衡延迟。 然后可以基于均衡延迟和上升沿和下降沿抽头参数来调整数据信号,并将其发送到VCSEL以进行输出。 同时,VCSEL可以偏置具有偏置电流值的偏置电流。

    Tunable laser device and a method for producing light of respective selectable wavelengths
    4.
    发明授权
    Tunable laser device and a method for producing light of respective selectable wavelengths 有权
    可调谐激光器件和用于产生各个可选波长的光的方法

    公开(公告)号:US08238388B2

    公开(公告)日:2012-08-07

    申请号:US12442244

    申请日:2007-09-20

    IPC分类号: H01S3/098 H01S3/10

    摘要: A tunable laser device (1) comprises integrally formed first and second ridge waveguides (5, 6). A longitudinally extending ridge (12) defines first and second light guiding regions (19, 20) of the first and second waveguides (5, 6) A plurality of first and second slots (27, 28) extending laterally in the ridge (12) adjacent the first and second waveguides (5, 6), produce first and second mirror loss spectra of the respective first and second waveguides (5, 6) with minimum peak values at respective first and second wavelength values. The spacing between the second slots (28) is different to that between the first slots (27) so that with one exception the minimum peak values of the first and second mirror loss spectrum occur at different wavelength values. The first and second waveguides (5, 6) are independently pumped with variable currents to selectively vary the common wavelength at which the minimum peak values of the first and second mirror loss spectra occur to produce Vernier tuning of the device.

    摘要翻译: 可调谐激光装置(1)包括一体形成的第一和第二脊状波导(5,6)。 纵向延伸的脊(12)限定第一和第二波导(5,6)的第一和第二导光区域(19,20)。在脊部(12)中横向延伸的多个第一和第二狭槽(27,28) 邻近第一和第二波导(5,6),在相应的第一和第二波长值处产生具有最小峰值的相应的第一和第二波导(5,6)的第一和第二镜损耗谱。 第二时隙(28)之间的间隔与第一时隙(27)之间的间隔不同,因此除了第一和第二镜损耗光谱的最小峰值出现在不同的波长值之外。 第一和第二波导(5,6)独立地用可变电流泵送,以选择性地改变第一和第二镜损耗光谱的最小峰值出现以产生器件的游标调谐的共同波长。

    LIGHT OSCILLATION DEVICE AND RECORDING DEVICE
    5.
    发明申请
    LIGHT OSCILLATION DEVICE AND RECORDING DEVICE 有权
    光振荡装置和记录装置

    公开(公告)号:US20110234744A1

    公开(公告)日:2011-09-29

    申请号:US13052547

    申请日:2011-03-21

    IPC分类号: B41J2/435 H01S5/00

    摘要: A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.

    摘要翻译: 光振荡装置具有自激振荡半导体激光器,其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构,并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入,分离来自自身振荡半导体激光器的激光束的一部分的光分离单元,感测由光分离单元分离的激光束的感光元件,以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量,进入自身振荡半导体激光器的增益部。

    Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
    6.
    发明授权
    Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus 有权
    半导体发光元件,使用半导体发光元件的光源和光学层析成像装置

    公开(公告)号:US07944567B2

    公开(公告)日:2011-05-17

    申请号:US11633473

    申请日:2006-12-05

    申请人: Hideki Asano

    发明人: Hideki Asano

    IPC分类号: G01B11/02 H01S5/00

    摘要: A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.

    摘要翻译: 半导体发光元件配备有包括有源层的层状结构,以及在其上表面和下表面处的电极层。 上电极层和下电极层中的至少一个被分成至少两个在光的波导方向上分离的电极。 有源层被构造为沿着波导方向具有不同的增益波长,以从对应于至少两个电极中的每一个的每个区域发射具有不同光谱的光。 输出光的光谱分布能够通过单独地改变由至少两个分割电极中的每一个注入的电流来改变。

    Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
    7.
    发明申请
    Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus 有权
    半导体发光元件,使用半导体发光元件的光源和光学层析成像装置

    公开(公告)号:US20100259758A1

    公开(公告)日:2010-10-14

    申请号:US11633473

    申请日:2006-12-05

    申请人: Hideki Asano

    发明人: Hideki Asano

    摘要: A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.

    摘要翻译: 半导体发光元件配备有包括有源层的层状结构,以及在其上表面和下表面处的电极层。 上电极层和下电极层中的至少一个被分成至少两个在光的波导方向上分离的电极。 有源层被构造为沿着波导方向具有不同的增益波长,以从对应于至少两个电极中的每一个的每个区域发射具有不同光谱的光。 输出光的光谱分布能够通过单独地改变由至少两个分割电极中的每一个注入的电流来改变。

    OSCILLATION DEVICE
    8.
    发明申请
    OSCILLATION DEVICE 有权
    振荡器件

    公开(公告)号:US20100164636A1

    公开(公告)日:2010-07-01

    申请号:US12091393

    申请日:2007-12-20

    IPC分类号: H03B7/08

    摘要: To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.

    摘要翻译: 为了提供具有波长可变宽度相对宽并且波长扫描速率相对较高的长振荡波长的振荡器件。 振荡装置包括具有相对于待振荡的电磁波的增益的增益介质,用于谐振电磁波的腔体结构以及能量注入装置,并将泵浦能量注入到增益介质中。 增益介质夹在第一负介电常数介质和第二介电常数介质之间,其中相对于电磁波的介电常数的实部为负。 提供电场施加装置用于第一负介电常数介质和第二负介电常数介质中的至少一个,以施加用于改变形成在增益介质的边界部分处的耗尽区的电场。

    Fabry-perot laser system with phase section, and method of use thereof
    9.
    发明申请
    Fabry-perot laser system with phase section, and method of use thereof 审中-公开
    具有相位截面的法布里 - 珀罗激光系统及其使用方法

    公开(公告)号:US20080279230A1

    公开(公告)日:2008-11-13

    申请号:US12071686

    申请日:2008-02-25

    申请人: Mario Dagenais

    发明人: Mario Dagenais

    IPC分类号: H01S3/10

    摘要: A laser having accurately adjustable frequency, the laser including a semiconductor material having a gain region and a phase tuning region, wherein the phase tuning region is coupled to a power source that applies current in order to alter the index of refraction of the phase tuning region. By altering the amount of current applied to the tuning section, the transmission peak of the signal from the laser can be altered.

    摘要翻译: 一种具有精确可调频率的激光器,该激光器包括具有增益区域和相位调谐区域的半导体材料,其中相位调谐区域耦合到施加电流的电源,以改变相位调谐区域的折射率 。 通过改变施加到调谐部分的电流量,可以改变来自激光器的信号的透射峰值。