摘要:
A continuously electronically tunable semiconductor laser has a lasing section, and first and second control sections separated from the lasing section by air gaps in a longitudinal arrangement. The longitudinal arrangement positions the lasing section between the two control sections, with the longitudinal arrangement corresponding to a lasing direction of the lasing section. The arrangement places longitudinal modes of the semiconductor laser in common with the longitudinal arrangement of the sections. Current is provided to each of the first and second control sections and the lasing section. Tuning is achieved by varying the current provided to at least one of the first control section, the second control section and the lasing section.
摘要:
A laser assembly comprising: a semiconductor laser with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in a standing wave cavity; a DC source coupled to the standing wave cavity; and an AC injection device for injecting an electrical AC signal within a range and/or within an integer multiple of the range into the standing wave cavity, the range within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and second electric contact section extending along a first longitudinal side of the longitudinal extension of the standing wave cavity, the AC injection device coupled to the first and/or second electric contact section such that the complex amplitude of the electrical AC signal differs for the first and second longitudinal electric contact section.
摘要:
Technologies are generally described for implementing non-linear VCSEL equalization. In some examples, a rising edge tap parameter, a falling edge tap parameter, an equalization delay and a bias current may be used to equalize a data signal to be output from a VCSEL. A VCSEL model may be used to derive a VCSEL response to one or more isolated data pulses. The derived response may then be used to determine the rising and falling edge tap parameters and an equalization delay, based on a bias current value for the VCSEL and a data rate associated with the data signal. The data signal may then be adjusted based on the equalization delay and the rising and falling edge tap parameter and sent to the VCSEL for output. At the same time, the VCSEL may be biased with a bias current having the bias current value.
摘要:
A tunable laser device (1) comprises integrally formed first and second ridge waveguides (5, 6). A longitudinally extending ridge (12) defines first and second light guiding regions (19, 20) of the first and second waveguides (5, 6) A plurality of first and second slots (27, 28) extending laterally in the ridge (12) adjacent the first and second waveguides (5, 6), produce first and second mirror loss spectra of the respective first and second waveguides (5, 6) with minimum peak values at respective first and second wavelength values. The spacing between the second slots (28) is different to that between the first slots (27) so that with one exception the minimum peak values of the first and second mirror loss spectrum occur at different wavelength values. The first and second waveguides (5, 6) are independently pumped with variable currents to selectively vary the common wavelength at which the minimum peak values of the first and second mirror loss spectra occur to produce Vernier tuning of the device.
摘要:
A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.
摘要翻译:光振荡装置具有自激振荡半导体激光器,其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构,并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入,分离来自自身振荡半导体激光器的激光束的一部分的光分离单元,感测由光分离单元分离的激光束的感光元件,以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量,进入自身振荡半导体激光器的增益部。
摘要:
A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
摘要:
A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
摘要:
To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.
摘要:
A laser having accurately adjustable frequency, the laser including a semiconductor material having a gain region and a phase tuning region, wherein the phase tuning region is coupled to a power source that applies current in order to alter the index of refraction of the phase tuning region. By altering the amount of current applied to the tuning section, the transmission peak of the signal from the laser can be altered.
摘要:
A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.