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    METHOD OF PREPARING A POROUS SEMICONDUCTOR FILM ON A SUBSTRATE
    33.
    发明申请
    METHOD OF PREPARING A POROUS SEMICONDUCTOR FILM ON A SUBSTRATE 审中-公开
    在基板上制备多孔半导体膜的方法

    公开(公告)号：US20100024877A1

    公开(公告)日：2010-02-04

    申请号：US12518705

    申请日：2007-12-12

    申请人： Michael Duerr ,  Gabriele Nelles ,  Akio Yasuda ,  Yusuke Suzuki ,  Kazuhiro Noda

    发明人： Michael Duerr ,  Gabriele Nelles ,  Akio Yasuda ,  Yusuke Suzuki ,  Kazuhiro Noda

    IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/09 ,  H01G9/20

    CPC分类号： H01G9/2095 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/003 ,  Y02E10/542

    摘要： A method of preparing a porous semiconductor film on a substrate comprising the steps: a) preparing, on a first substrate, an adhesion layer capable of providing electrical and mechanical contact between a porous semiconductor layer attached to said adhesion layer and said first substrate, b) applying on a second substrate that is capable of withstanding temperatures >=300° C. a spacer layer and applying a porous semiconductor layer on said spacer layer, c) applying an assisting layer on said porous semiconductor layer, said assisting layer providing support for said porous semiconductor layer, d) removing said spacer layer e) transferring said porous semiconductor layer supported by said assisting layer onto said ashesion layer, f) pressing said porous semiconductor layer onto said adhesion layer, g) removing said assisting layer from said porous semiconductor layer, thereby obtaining said first substrate having as a porous semiconductor film said porous semiconductor layer attached thereon by way of said adhesion layer.

    摘要翻译： 一种在衬底上制备多孔半导体膜的方法，包括以下步骤：a）在第一衬底上制备能够在附着到所述粘合层的多孔半导体层和所述第一衬底之间提供电和机械接触的粘合层，b ）施加在能够承受温度> = 300℃的第二基板上的间隔层并且在所述间隔层上施加多孔半导体层，c）在所述多孔半导体层上施加辅助层，所述辅助层为 所述多孔半导体层，d）去除所述间隔层e）将由所述辅助层支撑的所述多孔半导体层转移到所述粘着层上，f）将所述多孔半导体层压在所述粘合层上，g）从所述多孔半导体 从而获得所述多孔半导体膜的所述第一衬底，所述多孔半导体膜附着在所述多孔半导体层上 其上通过所述粘合层。