公开(公告)号：US09429544B2

公开(公告)日：2016-08-30

申请号：US13417399

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01R33/02 ,  G01N27/72 ,  G01N27/74 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/05 ,  G01N15/06

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

公开(公告)号：US20120169332A1

公开(公告)日：2012-07-05

申请号：US13417399

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01R33/02 ,  B23P17/04

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

公开(公告)号：US07443707B2

公开(公告)日：2008-10-28

申请号：US11732073

申请日：2007-04-02

申请人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

发明人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

摘要翻译： 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US20070184561A1

公开(公告)日：2007-08-09

申请号：US11732073

申请日：2007-04-02

申请人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

发明人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC分类号： H01L21/00

CPC分类号： G11C11/16

摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

摘要翻译： 一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。 在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层 它实际上并没有被选中，也提供了抗热搅拌的稳定性。

公开(公告)号：US20060221673A1

公开(公告)日：2006-10-05

申请号：US11093613

申请日：2005-03-30

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C8/14 ,  G11C11/15

摘要： In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.

摘要翻译： 在基于MTJ的MRAM阵列中，分段字线选择晶体管及其相关连接的大小成为显着的开销，特别是当沿着小行星曲线的硬轴选择工作点时。 通过将大分段字线选择晶体管放置在MTJ阵列之下并将整个MRAM单元阵列降低到与简单的交叉点MRAM阵列相当的水平，已经克服了这个问题。

公开(公告)号：US20060211155A1

公开(公告)日：2006-09-21

申请号：US11438179

申请日：2006-05-22

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.

摘要翻译： 在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。 因此，线和无细胞层之间存在均匀的间隔。

公开(公告)号：US07067330B2

公开(公告)日：2006-06-27

申请号：US10892668

申请日：2004-07-16

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

公开(公告)号：US07027324B2

公开(公告)日：2006-04-11

申请号：US10865722

申请日：2004-06-09

申请人： Hsu Kai (Karl) Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yee Yang

发明人： Hsu Kai (Karl) Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yee Yang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

摘要翻译： 公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。 磁存储单元包括磁存储装置和隔离装置。 隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。 磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。 一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。 在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

公开(公告)号：US20060014346A1

公开(公告)日：2006-01-19

申请号：US11001382

申请日：2004-12-01

申请人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

发明人： Tai Min ,  Pokang Wang ,  Xizeng Shi ,  Yimin Guo

IPC分类号： H01L21/336

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659

摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

摘要翻译： 在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。 该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。 由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

公开(公告)号：US20050276100A1

公开(公告)日：2005-12-15

申请号：US10865717

申请日：2004-06-09

申请人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

发明人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC分类号： G06F12/00 ,  G11C8/14 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15 ,  G11C8/14

摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. In one aspect, the method and system also include utilizing at least one storage for storing a state of each of the magnetic storage cells determined during a read operation made during a write operation. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segment at substantially the same time as the portion of the magnetic cells are written.

摘要翻译： 公开了一种用于编程和读取磁存储器的方法和系统。 磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。 该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。 一方面，该方法和系统还包括利用至少一个存储器来存储在写入操作期间进行的读取操作期间确定的每个磁存储单元的状态。 该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。 所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。