公开(公告)号：US20070298582A1

公开(公告)日：2007-12-27

申请号：US11850678

申请日：2007-09-06

申请人： Chen-Hsiung Yang

发明人： Chen-Hsiung Yang

IPC分类号： H01L21/76

CPC分类号： H01L21/2007 ,  B81B2203/0127 ,  B81C1/00603 ,  B81C2201/019

摘要： A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.

摘要翻译： 提供了一种执行双面处理的方法。 首先，提供具有布置在前表面上的结构图案的晶片。 接着，在结构图案上限定多个前划线，并将填充层填充到前划线中。 接着，用结合层将结构图形结合到载体晶片上，并且在晶片的背面上形成多个后划痕线。 最后，去除填充在前划痕线中的填充层。

公开(公告)号：US20070249137A1

公开(公告)日：2007-10-25

申请号：US11409582

申请日：2006-04-24

申请人： Sheng-Chieh Liu ,  Chia-Hung Kao ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Yuan-Bang Lee

发明人： Sheng-Chieh Liu ,  Chia-Hung Kao ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Yuan-Bang Lee

IPC分类号： H01L21/306 ,  H01L21/76 ,  H01L21/302

CPC分类号： B81C1/00603

摘要： Disclosed is a method and a system for wafer backside alignment. A zero mark patterning on front side of a substrate. A plurality of layers are deposited on the front side of the substrate. The wafer is flipped over with backside of the substrate facing up, and a through wafer etching is performed from the backside to an etch stop layer deposited over the front side of the substrate.

摘要翻译： 公开了一种用于晶片背面对准的方法和系统。 在基板的正面上形成零标记。 多个层沉积在基板的正面上。 将晶片的背面朝上翻转，从背面到沉积在基板前侧的蚀刻停止层进行贯通晶片蚀刻。