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公开(公告)号：US09969615B2
公开(公告)日：2018-05-15
申请号：US15147233
申请日：2016-05-05
发明人： Antti Iihola , Altti Torkkeli
IPC分类号： H01L21/00 , B81C1/00 , G01C19/5733 , G01C19/5769
CPC分类号： B81C1/00595 , B81B2201/0235 , B81B2201/0242 , B81B2201/033 , B81B2203/0136 , B81C1/00603 , G01C19/56 , G01C19/5733 , G01C19/5769
摘要： A method for manufacturing a micromechanical device layer is performed on a device wafer comprising a single layer of homogenous material. The method comprises patterning a first mask on a first face of the device wafer, the first mask patterning at least lateral dimensions of comb structures and outlines of large device structures. First trenches are etched, the first trenches defining the lateral dimensions of the at least comb structures and outlines of large device structures in a single deep etching process. Recession etching may be used on one or two faces of the device wafer for creating structures at least partially recessed below the respective surfaces of the device wafer. A double mask etching process may be used on one or two faces of the device wafer for creating structures at least partially recessed to mutually varying depths from the respective face of the device wafer.
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公开(公告)号：US09611142B2
公开(公告)日：2017-04-04
申请号：US15077188
申请日：2016-03-22
发明人： Yasuyuki Hirata , Gen Matsuoka
CPC分类号： B81C1/00492 , B81B3/0086 , B81B2201/042 , B81B2203/0136 , B81C1/00404 , B81C1/00603 , B81C2201/0102 , B81C2201/0132 , B81C2201/0198 , G02B26/0841
摘要： At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.
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公开(公告)号：US20160200569A1
公开(公告)日：2016-07-14
申请号：US15077188
申请日：2016-03-22
发明人： Yasuyuki HIRATA , Gen MATSUOKA
IPC分类号： B81C1/00
CPC分类号： B81C1/00492 , B81B3/0086 , B81B2201/042 , B81B2203/0136 , B81C1/00404 , B81C1/00603 , B81C2201/0102 , B81C2201/0132 , B81C2201/0198 , G02B26/0841
摘要： At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.
摘要翻译： 在从第一硅层侧蚀刻SOI衬底的第一蚀刻步骤中，由第一硅层形成的第一结构的一部分形成为具有比最终形状更大的形状的预结构。 在SOI衬底的第二硅层侧形成最终掩模的掩模形成步骤中，在预结构中形成对应于第一结构的最终形状的第一掩模。 在从第二硅层侧蚀刻SOI衬底的第二蚀刻步骤中，使用第一掩模蚀刻第二硅层和预制结构以形成第一结构的最终形状。
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公开(公告)号：US07566574B2
公开(公告)日：2009-07-28
申请号：US11850678
申请日：2007-09-06
申请人： Chen-Hsiung Yang
发明人： Chen-Hsiung Yang
IPC分类号： H01L21/00
CPC分类号： H01L21/2007 , B81B2203/0127 , B81C1/00603 , B81C2201/019
摘要： A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.
摘要翻译： 提供了一种执行双面处理的方法。 首先，提供具有布置在前表面上的结构图案的晶片。 接着，在结构图案上限定多个前划线，并将填充层填充到前划线中。 接着，用结合层将结构图形结合到载体晶片上，并且在晶片的背面形成多个后划线。 最后，去除填充在前划痕线中的填充层。
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公开(公告)号：US20160202473A1
公开(公告)日：2016-07-14
申请号：US15077105
申请日：2016-03-22
发明人： Ryohei UCHINO , Gen MATSUOKA
CPC分类号： B81C1/00492 , B81B3/0086 , B81B2201/042 , B81B2203/0136 , B81C1/00404 , B81C1/00603 , B81C2201/0102 , B81C2201/0132 , B81C2201/0198 , G02B26/0841
摘要： A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.
摘要翻译： 反射镜装置包括框架体，配置成相对于框架体围绕Y轴倾斜的反射镜，固定的内梳状电极，包括沿着Y轴布置在排列方向上的多个电极指， 框体和可动内梳状电极，其包括沿着排列方向布置并设置在反射镜处的多个电极指，固定内梳电极和可移动内梳电极的电极指交替布置。 镜子包括镜体和从镜体延伸的延伸部分。 可动内梳电极的一些电极指设置在镜体上，可移动内梳电极的另一电极指在延伸部处设置。
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公开(公告)号：US09382113B2
公开(公告)日：2016-07-05
申请号：US14070732
申请日：2013-11-04
发明人： Jer-Wei Hsieh , Han-Tang Su
CPC分类号： B81C1/00603 , B81B2201/042 , B81B2203/0136 , B81C1/0015 , G02B26/0833
摘要： In a method for fabricating a self-aligned vertical comb drive structure, a multi-layer structure is first formed. The multi-layer structure includes inter-digitated first and second comb structures formed via etching using a first mask layer as a mask. The first comb structure includes a plurality of first comb fingers, each having a first finger portion formed in a first device layer and a second finger portion formed in a second device layer and separated from the first finger portion by a self-aligned pattern on a stop layer. The second comb structure includes a plurality of second comb fingers formed solely in the second device layer. The second finger portions of the first comb fingers are subsequently removed.
摘要翻译： 在制造自对准垂直梳状驱动结构的方法中，首先形成多层结构。 多层结构包括使用第一掩模层作为掩模通过蚀刻形成的经数字化的第一和第二梳状结构。 第一梳结构包括多个第一梳指，每个第一梳指具有形成在第一器件层中的第一指部和形成在第二器件层中的第二指部，并且在第一器件层上分离自对准图案 停止层。 第二梳结构包括仅在第二器件层中形成的多个第二梳指。 随后去除第一梳齿的第二手指部分。
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公开(公告)号：US20130221439A1
公开(公告)日：2013-08-29
申请号：US13673263
申请日：2012-11-09
CPC分类号： G03F9/708 , B81C1/00603 , G03F9/7084 , H01L21/308 , H01L21/76256 , H01L21/764 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.
摘要翻译： 根据本发明的SOI晶片包括支撑基板和形成在支撑基板上的绝缘层，在其上设置绝缘层的支撑基板的一个主表面上形成预定的空腔图案，还包括有源半导体 所述绝缘层上形成有所述空腔图案的绝缘层，所述有源半导体层不形成在所述支撑基板的外周部，并且还包括形成在所述支撑基板的所述一个的外周部的多个叠加标记图案 用于指定空腔图案的位置的支撑基板的主表面。
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公开(公告)号：US08305670B2
公开(公告)日：2012-11-06
申请号：US13320828
申请日：2009-05-24
申请人： Moshe Medina , Pinchas Chaviv , Yaron Fein
发明人： Moshe Medina , Pinchas Chaviv , Yaron Fein
IPC分类号： G02B26/08
CPC分类号： G02B26/08 , B81C1/00603 , G02B26/0841 , H02N1/008
摘要： A MOEMS apparatus for scanning an optical beam is formed from a double active layer silicon on insulator (DSOI) substrate that includes two active layers separated by an insulating layer. The apparatus includes an electro-static comb drive having a stator formed in a first of the two active layers and a rotor formed in a second of the two active layers. The electro-static comb drive is operative to impart a tilting motion to a micro-mirror formed in the second active layer. The MOEMS apparatus is designed such that: a) at least one of the distances created between a tooth belonging to the rotor and an adjacent tooth belonging to the stator is less than 7 μm; and the aspect ratio of the apparatus is higher than 1:20.
摘要翻译： 用于扫描光束的MOEMS装置由包含由绝缘层隔开的两个有源层的双有源层绝缘体上硅（DSOI）衬底形成。 该装置包括一个静电梳状驱动器，其具有形成在两个有源层中的第一个中的定子和形成在两个有源层中的第二个中的第二个的转子。 静电梳状驱动器可操作以向在第二活性层中形成的微反射镜赋予倾斜运动。 MOEMS装置被设计成：a）在属于转子的齿和属于定子的相邻齿之间产生的至少一个距离小于7μm; 并且装置的纵横比高于1:20。
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公开(公告)号：US20060030120A1
公开(公告)日：2006-02-09
申请号：US10904741
申请日：2004-11-24
申请人： Shih-Feng Shao , Chih-Ping Kuo
发明人： Shih-Feng Shao , Chih-Ping Kuo
IPC分类号： H01L21/30
CPC分类号： H01L21/304 , B81C1/00603 , B81C1/00833 , B81C2201/053 , H01L21/67132
摘要： First, a wafer having a first surface and a second surface is provided. Then, a first heat sensitive tape is utilized to bond the second surface of the wafer to a first carrier, and at least a first semiconductor process is performed upon the first surface of the wafer. Subsequently, a second heat sensitive tape is utilized to bond the first surface of the wafer to a second carrier, and the first heat sensitive tape is separated from the second surface of the wafer by heating. Following that, at least a second semiconductor process is performed upon the second surface of the wafer, and the second heat sensitive tape is separated from the first surface of the wafer by heating.
摘要翻译： 首先，提供具有第一表面和第二表面的晶片。 然后，利用第一热敏胶带将晶片的第二表面接合到第一载体上，并且至少第一半导体工艺在晶片的第一表面上进行。 随后，使用第二热敏胶带将晶片的第一表面粘合到第二载体上，并且通过加热将第一热敏胶带与晶片的第二表面分离。 接着，在晶片的第二表面上执行至少第二半导体工艺，并且通过加热将第二热敏带与晶片的第一表面分离。
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公开(公告)号：US09902613B2
公开(公告)日：2018-02-27
申请号：US15315640
申请日：2015-08-19
发明人： Errong Jing
CPC分类号： B81C3/004 , B81C1/00 , B81C1/00603 , B81C3/00 , B81C2203/051 , G03F9/00 , H01L21/68
摘要： A positioning method in a microprocessing process of bulk silicon comprises the steps of: fabricating, on a first surface of a first substrate (10), a first pattern (100), a stepper photo-etching machine alignment mark (200) for positioning the first pattern, and a double-sided photo-etching machine first alignment mark (300) for positioning the stepper photo-etching machine alignment mark; fabricating, on a second surface, opposite to the first surface, of the first substrate, a double-sided photo-etching machine second alignment mark (400) corresponding to the double-sided photo-etching machine first alignment mark; bonding a second substrate (20) on the first surface of the first substrate; performing thinning on a first surface of the second substrate; fabricating, on the first surface of the second substrate, a double-sided photo-etching machine third alignment mark (500) corresponding to the double-sided photo-etching machine second alignment mark; and finding, on the first surface of the second substrate by using the double-sided photo-etching machine third alignment mark, a corresponding position of the stepper photo-etching machine alignment mark.
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