公开(公告)号：US07611960B2

公开(公告)日：2009-11-03

申请号：US11409582

申请日：2006-04-24

Applicant: Sheng-Chieh Liu ,  Chia-Hung Kao ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Yuan-Bang Lee

Inventor： Sheng-Chieh Liu ,  Chia-Hung Kao ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Yuan-Bang Lee

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00603

Abstract: Disclosed is a method and a system for wafer backside alignment. A zero mark patterning on front side of a substrate. A plurality of layers are deposited on the front side of the substrate. The wafer is flipped over with backside of the substrate facing up, and a through wafer etching is performed from the backside to an etch stop layer deposited over the front side of the substrate.

Abstract translation: 公开了一种用于晶片背面对准的方法和系统。 在基板的正面上形成零标记。 多个层沉积在基板的正面上。 将晶片的背面朝上翻转，从背面到沉积在基板前侧的蚀刻停止层进行贯通晶片蚀刻。

公开(公告)号：US20090098283A1

公开(公告)日：2009-04-16

申请号：US12235960

申请日：2008-09-23

Applicant: Ruei-Hung JANG ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

Inventor： Ruei-Hung JANG ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

IPC: B29D11/00

CPC classification number: G02B26/0841

Abstract: Disclosed is a method and a system for forming alignment marks on a transparent substrate. A light reflective layer is deposited over an optically transparent substrate of a wafer. A region is defined around an alignment mark on the optically transparent substrate. The light reflective layer is removed from a substantial portion of the transparent substrate excluding the region. In addition, a micro electro-mechanical systems device is disclosed. The device comprises an optically transparent substrate, at least one optically partially transparent alignment mark on the optically transparent substrate, and a plurality of reflective elements or imaging pixels attached to the optically transparent substrate.

Abstract translation: 公开了一种在透明基板上形成对准标记的方法和系统。 光反射层沉积在晶片的光学透明衬底上。 围绕光学透明基板上的对准标记限定区域。 除了该区域之外，从透明基板的大部分除去光反射层。 另外，公开了一种微电子机械系统装置。 该器件包括光学透明衬底，在光学透明衬底上的至少一个光学部分透明的对准标记，以及附接到光学透明衬底的多个反射元件或成像像素。

公开(公告)号：US07450296B2

公开(公告)日：2008-11-11

申请号：US11400974

申请日：2006-04-10

Applicant: Ruei-Hung Jang ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

Inventor： Ruei-Hung Jang ,  Ya-Wen Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

IPC: G02B26/00 ,  G02B26/08

CPC classification number: G02B26/0841

Abstract: Disclosed is a method and a system for forming alignment marks on a transparent substrate. A light reflective layer is deposited over an optically transparent substrate of a wafer. A region is defined around an alignment mark on the optically transparent substrate. The light reflective layer is removed from a substantial portion of the transparent substrate excluding the region. In addition, a micro electro-mechanical systems device is disclosed. The device comprises an optically transparent substrate, at least one optically partially transparent alignment mark on the optically transparent substrate, and a plurality of reflective elements or imaging pixels attached to the optically transparent substrate.

Abstract translation: 公开了一种在透明基板上形成对准标记的方法和系统。 光反射层沉积在晶片的光学透明衬底上。 围绕光学透明基板上的对准标记限定区域。 除了该区域之外，从透明基板的大部分除去光反射层。 另外，公开了一种微电子机械系统装置。 该器件包括光学透明衬底，在光学透明衬底上的至少一个光学部分透明的对准标记，以及附接到光学透明衬底的多个反射元件或成像像素。

公开(公告)号：US07205176B2

公开(公告)日：2007-04-17

申请号：US10978011

申请日：2004-10-29

Applicant: Fei-Yuh Chen ,  Wei-Ya Wang ,  Yuh-Hwa Chang ,  Tzu-Yang Wu

Inventor： Fei-Yuh Chen ,  Wei-Ya Wang ,  Yuh-Hwa Chang ,  Tzu-Yang Wu

IPC: H01L21/00

CPC classification number: G02B26/0833

Abstract: An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with a protect layer formed over the upper oxide layer. A spacer oxide layer is formed to cover the structure and oxide spacers are formed on sidewalls of the discrete structure using a selective etch process that is terminated when horizontal portions of the spacer oxide layer have cleared to expose the release layer formed below the discrete mirror structure and the protect layer. The superjacent protect layer prevents the spacer oxide etch process from attacking the upper oxide layer and therefore maintains the integrity of the upper oxide layer and the functionality of the mirror structure.

Abstract translation: 使用形成侧壁氧化物间隔物的蚀刻工艺形成MEMS镜结构，同时保持在MEMS镜结构的反射层上形成的氧化物层的完整性。 离散镜结构被形成为包括夹在氧化物层之间的反射层和形成在上氧化物层上的保护层。 形成间隔氧化物层以覆盖该结构，并且使用选择性蚀刻工艺在离散结构的侧壁上形成氧化物间隔物，该选择性蚀刻工艺在间隔氧化物层的水平部分已经清除以暴露形成在离散镜结构下方的释放层时终止 和保护层。 上部保护层防止间隔氧化物蚀刻工艺攻击上部氧化物层，从而保持上部氧化物层的完整性和反射镜结构的功能。

公开(公告)号：US20060207964A1

公开(公告)日：2006-09-21

申请号：US11081645

申请日：2005-03-17

Applicant: Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

Inventor： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

IPC: C23F1/00 ,  C03C25/68

CPC classification number: C03C15/00 ,  B81B2201/042 ,  B81C1/00476 ,  H01L21/0206 ,  H01L21/32134

Abstract: A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

Abstract translation: 一种用于释放微机械结构的方法。 提供基板。 在衬底上方提供至少一个微机械结构层，其中微机械结构层由硅材料的牺牲层维持。 提供了一种基于胺的蚀刻剂来蚀刻硅材料。 也就是说，在用胺类蚀刻剂进行后清洗过程时，可以同时除去聚合物残余物和硅的牺牲层而无需任何额外的蚀刻工艺。

公开(公告)号：US20060199393A1

公开(公告)日：2006-09-07

申请号：US11383931

申请日：2006-05-17

Applicant: Yuan-Bang Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  U. Lin ,  Yu-Chih Lai ,  De-Fang Chen ,  Pei-Hsuan Lin ,  Shan-Hua Wu ,  Hung-Hsin Liu

Inventor： Yuan-Bang Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  U. Lin ,  Yu-Chih Lai ,  De-Fang Chen ,  Pei-Hsuan Lin ,  Shan-Hua Wu ,  Hung-Hsin Liu

IPC: H01L21/302

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/67069

Abstract: An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.

Abstract translation: 使用纯H 2 O 2等离子体的原位执行方法从衬底或晶片上去除一层抗蚀剂，而基本上不累积电荷。 而且，使用纯H 2 O 2等离子体或纯H 2 O 2蒸气的原位实施方法从基板或晶片的表面或表面释放或去除电荷 其在一个或多个IC制造过程中积累。

公开(公告)号：US07294279B2

公开(公告)日：2007-11-13

申请号：US11081645

申请日：2005-03-17

Applicant: Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

Inventor： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

IPC: C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00

CPC classification number: C03C15/00 ,  B81B2201/042 ,  B81C1/00476 ,  H01L21/0206 ,  H01L21/32134

Abstract: A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

Abstract translation: 一种用于释放微机械结构的方法。 提供基板。 在衬底上方提供至少一个微机械结构层，其中微机械结构层由硅材料的牺牲层维持。 提供了一种基于胺的蚀刻剂来蚀刻硅材料。 也就是说，在用胺类蚀刻剂进行后清洗过程时，可以同时除去聚合物残余物和硅的牺牲层而无需任何额外的蚀刻工艺。

公开(公告)号：US20060197091A1

公开(公告)日：2006-09-07

申请号：US11252328

申请日：2005-10-17

Applicant: Kun-Ming Huang ,  YJ Wang ,  Ying-De Chen ,  Eugene Chu ,  Fu-Hsin Chen ,  Tzu-Yang Wu

Inventor： Kun-Ming Huang ,  YJ Wang ,  Ying-De Chen ,  Eugene Chu ,  Fu-Hsin Chen ,  Tzu-Yang Wu

IPC: H01L27/108 ,  H01L29/786 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/20

CPC classification number: H01L28/60

Abstract: A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.

Abstract translation: 公开了一种电容器结构，其具有通常为锥形或阶梯形轮廓以防止或减少介电层击穿。 电容器结构包括第一导电层，至少一个电介质层，其具有设置在第一导电层上的第一区域和设置在至少一个电介质层上的第二导电层。 第二导电层具有小于至少一个电介质层的第一区域的第二区域。 还公开了一种制造电容器结构的方法。

公开(公告)号：US20060175290A1

公开(公告)日：2006-08-10

申请号：US11054015

申请日：2005-02-09

Applicant: Yuan-Bang Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chung-Yuan Cheng ,  Sheng-Chieh Liu

Inventor： Yuan-Bang Lee ,  Tzu-Yang Wu ,  Sheng-Liang Pan ,  Chung-Yuan Cheng ,  Sheng-Chieh Liu

IPC: C23F1/00 ,  H01L21/302 ,  B44C1/22 ,  C03C15/00

CPC classification number: H01L21/32138 ,  C23F4/00 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/32136

Abstract: An pure H2O stripping process for etched metal wafers effectively solves the metal corrosion deficiencies induced by O2, N2 plasma charging. The pure H2O plasma stripping releases and neutralizes the storage of positive charge accumulated in the wafer, reduces chlorine concentration, and effectively strips the photoresist and etching residue. Thereby reducing metal corrosion and increases the anti-metal corrosion window. The pure H2O plasma stripping requires no additional equipment and or steps.

Abstract translation: 用于蚀刻的金属晶片的纯H 2 O 2剥离工艺有效地解决了由O 2，N 2等离子体充电引起的金属腐蚀缺陷。 纯H 2 O等离子体剥离释放和中和积聚在晶片中的正电荷的存储，降低氯浓度，并有效地剥离光致抗蚀剂和蚀刻残留物。 从而减少金属腐蚀并增加抗金属腐蚀窗口。 纯H 2 O 3等离子体剥离不需要额外的设备和/或步骤。

公开(公告)号：US20060037933A1

公开(公告)日：2006-02-23

申请号：US10923026

申请日：2004-08-23

Applicant: Wei-Ya Wang ,  Chung-Yuan Cheng ,  Tzu-Yang Wu ,  Keven Hung ,  Fei-Yuh Chen

Inventor： Wei-Ya Wang ,  Chung-Yuan Cheng ,  Tzu-Yang Wu ,  Keven Hung ,  Fei-Yuh Chen

IPC: C23F1/00 ,  B44C1/22

CPC classification number: C23F4/00 ,  B81B2201/04 ,  G02B26/0833

Abstract: A mirror process uses a tungsten passivation layer to prevent metal-spiking induced mirror bridging and improve mirror curvature. A mirror structure is patterned on a first sacrificial layer overlying a substrate. A tungsten passivation layer is then blanket deposited to cover the top and sidewalls of the mirror structure. A second sacrificial layer is formed overlying the tungsten passivation layer. A releasing process with an etchant including XeF2 is performed to remove the second sacrificial layer, the tungsten passivation layer and the first sacrificial layer simultaneously.

Abstract translation: 镜面处理使用钨钝化层来防止金属尖峰引起的反射镜桥接并改善镜面曲率。 在覆盖衬底的第一牺牲层上图案化镜面结构。 钨钝化层然后被覆盖沉积以覆盖镜结构的顶部和侧壁。 覆盖钨钝化层的第二牺牲层被形成。 执行包括XeF 2＆gt; 2的蚀刻剂的释放过程以同时去除第二牺牲层，钨钝化层和第一牺牲层。