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    HEIGHT ADJUSTMENT DEVICE AND HOME APPLIANCE COMPRISING SAME
    432.
    发明申请
    HEIGHT ADJUSTMENT DEVICE AND HOME APPLIANCE COMPRISING SAME 有权

    公开(公告)号：US20250109902A1

    公开(公告)日：2025-04-03

    申请号：US18979923

    申请日：2024-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehoon SONG ,  Juik OH ,  Jongwon LEE ,  Cheolmin LEE ,  Hojune JEON ,  Hyunsung JEONG

    IPC: F25D23/00 ,  F25D11/00

    Abstract: A home appliance includes: a main body; and a height adjustment device configured to adjust a height of the main body from a ground, where the height adjustment device includes: a housing configured to be coupled to a lower portion of the main body; a leg passing through the housing and including a male thread portion on an outer circumferential surface thereof; a worm wheel inside the housing and including a female thread portion on an inner circumferential surface thereof corresponding to the male thread portion of the leg such that the worm wheel is screw-coupled to the leg and is configured to ascend and descend; a worm engaged with the worm wheel and configured to rotate the worm wheel; and a worm shaft coupleable to and detachable from the worm and configured to rotate the worm in a state in which the worm shaft is coupled to the worm.

    Variable resistance memory device
    439.
    发明授权
    Variable resistance memory device 有权

    公开(公告)号：US12268042B2

    公开(公告)日：2025-04-01

    申请号：US17746247

    申请日：2022-05-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyuncheol Kim ,  Yongseok Kim ,  Dongsoo Woo ,  Kyunghwan Lee

    IPC: H01L21/00 ,  H10K10/50 ,  H10K19/00 ,  H10K85/20

    Abstract: A variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. The resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.

    Nonvolatile memory device
    440.
    发明授权
    Nonvolatile memory device 有权

    公开(公告)号：US12268001B2

    公开(公告)日：2025-04-01

    申请号：US17736384

    申请日：2022-05-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Hwan Lee ,  Hyun Min Cho

    IPC: H10B43/27 ,  H10B43/10 ,  H10B43/30

    Abstract: A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.

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