Sputter Targets with Expansion Grooves for Reduced Separation
    41.
    发明申请
    Sputter Targets with Expansion Grooves for Reduced Separation 有权
    用于减少分离的扩展槽的溅射靶

    公开(公告)号:US20090120784A1

    公开(公告)日:2009-05-14

    申请号:US11883459

    申请日:2006-02-02

    申请人: David B. Smathers

    发明人: David B. Smathers

    IPC分类号: C23C14/35

    摘要: A magnetron sputtering target having at least one expansion groove strategically located on the target surface such that, during magnetron sputtering, contamination of the target surface due to separation and de-lamination of re-deposited sputtered particles from the target surface is reduced. The sputter target comprises a re-deposited layer having secondary cracks and a characteristic distance between cracks for supporting the inherent material stress associated with the thermal expansion of the target. The expansion groove is then positioned substantially within the characteristic distance to reduce separation and de-lamination of the re-deposited layer from the target surface.

    摘要翻译: 磁控溅射靶具有至少一个膨胀凹槽,该膨胀凹槽位于目标表面上,使得在磁控溅射期间,由于再沉积的溅射颗粒从目标表面的分离和分层而导致目标表面的污染减少。 溅射靶包括具有次裂纹的再沉积层和用于支撑与靶的热膨胀相关的固有材料应力的裂纹之间的特征距离。 膨胀槽然后基本上位于特征距离内,以减少再沉积层与目标表面的分离和去层压。

    Sputtering Target
    42.
    发明申请
    Sputtering Target 审中-公开
    溅射目标

    公开(公告)号:US20090008786A1

    公开(公告)日:2009-01-08

    申请号:US12223499

    申请日:2007-02-26

    IPC分类号: H01L23/48 C22C21/04

    摘要: The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

    摘要翻译: 本发明提供一种包含铝和一种或多种包括Ni,Co,Ti,V,Cr,Mn,Mo,Nb,Ta,W和稀土金属(REM)的合金元素的溅射靶。 向纯铝和铝合金靶添加非常少量的合金元素可以通过影响目标的再结晶过程来提高沉积布线膜的均匀性。 合金元素含量的范围为0.01〜100ppm,优选为0.1〜50ppm,更优选为0.1〜10ppm,足以防止纯铝和铝合金如30ppm Si合金的动态再结晶 。 添加少量合金元素可以提高纯铝和铝合金薄膜的热稳定性和电迁移能力,同时保持其低电阻率和良好的可蚀刻性。 本发明还提供一种制造微合金铝和铝合金溅射靶的方法。

    Process for making filamentary superconductors using tin-magnesium
eutectics
    43.
    发明授权
    Process for making filamentary superconductors using tin-magnesium eutectics 失效
    使用锡 - 镁共晶体制造丝状超导体的工艺

    公开(公告)号:US5098798A

    公开(公告)日:1992-03-24

    申请号:US587755

    申请日:1990-09-25

    申请人: David B. Smathers

    发明人: David B. Smathers

    摘要: A method is disclosed for fabricating a wire from niobium tin produced in situ in a filamentous structure capable of achieving the superconducting state which comprises overlapping a tin alloy core comprised of tin-magnesium eutectic alloy with alternating layers of copper and foraminous layers followed by drawing the thus-formed niobium filaments into wire, then heating the wire at sufficiently high temperature to cause the eutectic alloy to homogeneously diffuse through the length of the copper wire and rods to react with the Nb, forming the A-15 crystal structure of Nb.sub.3 Sn, characterized by refined grain structure therein and improved current carrying capability.

    摘要翻译: 公开了一种从能够实现超导状态的丝状结构中原位生产的铌锡制成线的方法,该方法包括将包含锡 - 镁共晶合金的锡合金芯与交替的铜和有孔层重叠,然后将 由此形成的铌丝变成线,然后在足够高的温度下加热线,使共晶合金均匀地扩散通过铜线和棒的长度与Nb反应,形成Nb 3 Sn的A-15晶体结构,其特征在于 通过精细晶粒结构,提高载流能力。