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公开(公告)号：US10063210B2
公开(公告)日：2018-08-28
申请号：US15293108
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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公开(公告)号：US20180224574A1
公开(公告)日：2018-08-09
申请号：US15805864
申请日：2017-11-07
发明人： Jeongyub LEE , Changseung LEE , Yongsung KIM , Jaekwan KIM , Byonggwon SONG , Sanghoon SONG , Kiyeon YANG
CPC分类号： G02B1/002 , C23C14/0617 , C23C14/34 , C23C14/5806 , C23C16/401 , C23C16/50 , G02B1/02 , G02B3/00
摘要： A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
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公开(公告)号：US09922809B2
公开(公告)日：2018-03-20
申请号：US15293063
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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公开(公告)号：US09903014B2
公开(公告)日：2018-02-27
申请号：US14777052
申请日：2014-03-18
发明人： Tsuyoshi Ogami , Tatsuo Hashimoto
CPC分类号： C23C14/325 , B23C5/10 , B23C2222/28 , B23C2222/84 , B23C2228/10 , B23C2228/24 , C23C14/022 , C23C14/0617 , C23C14/0641 , C23C14/54 , C23C30/005
摘要： A surface-coated cutting tool of the present invention includes: a hard coating layer which is vapor-deposited on a surface of a tool body made of tungsten carbide-based cemented carbide and has an average thickness of 2 mm to 10 mm, in which (a) the hard coating layer comprises a layer made of complex nitride of Al, Cr, and B in which a ratio (atomic ratio) of the amount of Cr is 0.2 to 0.45 and a ratio (atomic ratio) of the amount of B is 0.01 to 0.1 to the total amount of Al, Cr, and B, and (b) in an area within 100 mm from an edge tip on a flank face of the surface-coated cutting tool, the hard coating layer has a granular crystal grain structure and the average grain size of granular crystal grains is 0.1 mm to 0.4 mm on the surface of the hard coating layer.
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5.发明申请公开(公告)号：US20180030617A1
公开(公告)日：2018-02-01
申请号：US15641746
申请日：2017-07-05
发明人： Sam-mook KANG , Jun-youn KIM , Young-jo TAK , Mi-hyun KIM , Young-soo PARK
IPC分类号： C30B25/16 , C23C16/52 , C23C14/54 , C23C14/06 , C23C16/30 , C30B29/40 , C30B25/18 , C23C14/22
CPC分类号： C30B25/165 , C23C14/0617 , C23C14/221 , C23C14/54 , C23C16/01 , C23C16/0272 , C23C16/303 , C23C16/455 , C23C16/4585 , C23C16/52 , C30B25/12 , C30B25/14 , C30B25/183 , C30B29/406 , H01J37/00 , H01L21/02002 , H01L21/02381 , H01L21/0254 , H01L21/0262 , H01L21/68721 , H01L21/68735 , H01L21/7806
摘要： An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
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6.发明申请公开(公告)号：US20160372653A1
公开(公告)日：2016-12-22
申请号：US15251221
申请日：2016-08-30
申请人： Murata Manufacturing Co., Ltd. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
IPC分类号： H01L41/18 , C04B35/581 , H01L41/316 , C23C14/06 , C23C14/14 , G10K9/125 , H01L41/08 , C23C14/34
CPC分类号： H01L41/18 , C04B35/581 , C04B35/62218 , C04B2235/3865 , C04B2235/40 , C23C14/0042 , C23C14/0617 , C23C14/0641 , C23C14/14 , C23C14/3435 , C23C14/3464 , G10K9/125 , H01L41/0805 , H01L41/081 , H01L41/0831 , H01L41/0973 , H01L41/187 , H01L41/27 , H01L41/316 , H03H3/02 , H03H9/02015 , H03H9/588 , H03H2003/023
摘要： A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
摘要翻译： 一种含锗氮化铝压电薄膜及其制造方法，其中通过溅射在基片上生长含锗的氮化铝压电薄膜。
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公开(公告)号：US20160237553A1
公开(公告)日：2016-08-18
申请号：US15041186
申请日：2016-02-11
发明人： Daoning Jia , Zhongjie Peng , Kunkun Yang
CPC分类号： C23C14/3414 , C23C14/022 , C23C14/0617 , C23C14/16 , C23C14/325 , C23C14/35 , C23C14/5853 , H01F1/0577 , H01F41/026
摘要： The present invention provides a method for depositing aluminum on a permanent Nd—Fe—B magnet including a step of cooling the chamber and the arc source by feeding a fluid of water at a cooling temperature of between 0° C. and 5° C. through the chamber and the arc source. The method also includes a step of adjusting a target source and a control magnet of the arc source in the chamber of the multi-arc ion plating apparatus to define a predetermined distance of between 1 cm and 10 cm. The step of depositing the film of aluminum further including steps of applying a current of between 50 A and 70 A and an electrical potential of between 100V and 200V to the target source of aluminum and directing the ions of aluminum using the arc source to the purified permanent Nd—Fe—B magnet for a time period of between 0.5 hours and 5 hours.
摘要翻译： 本发明提供了一种在永久性Nd-Fe-B磁体上沉积铝的方法，包括通过在0℃至5℃的冷却温度下供给水的流体来冷却腔室和电弧源的步骤。 通过室和电弧源。 该方法还包括在多弧离子镀设备的腔室中调整电弧源的目标源和控制磁体以限定1cm至10cm之间的预定距离的步骤。 进一步沉积铝膜的步骤包括以下步骤：向铝源施加50A至70A的电流和100V至200V的电势，并使用电弧源将铝离子引导至纯化的 永磁Nd-Fe-B磁体，时间为0.5小时至5小时。
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公开(公告)号：US20160040283A1
公开(公告)日：2016-02-11
申请号：US14777052
申请日：2014-03-18
发明人： Tsuyoshi Ogami , Tatsuo Hashimoto
CPC分类号： C23C14/325 , B23C5/10 , B23C2222/28 , B23C2222/84 , B23C2228/10 , B23C2228/24 , C23C14/022 , C23C14/0617 , C23C14/0641 , C23C14/54 , C23C30/005
摘要： A surface-coated cutting tool of the present invention includes: a hard coating layer which is vapor-deposited on a surface of a tool body made of tungsten carbide-based cemented carbide and has an average thickness of 2 mm to 10 mm, in which (a) the hard coating layer comprises a layer made of complex nitride of Al, Cr, and B in which a ratio (atomic ratio) of the amount of Cr is 0.2 to 0.45 and a ratio (atomic ratio) of the amount of B is 0.01 to 0.1 to the total amount of Al, Cr, and B, and (b) in an area within 100 mm from an edge tip on a flank face of the surface-coated cutting tool, the hard coating layer has a granular crystal grain structure and the average grain size of granular crystal grains is 0.1 mm to 0.4 mm on the surface of the hard coating layer.
摘要翻译： 本发明的表面涂层切削工具包括：在由碳化钨类硬质合金制成的工具主体的表面上气相沉积并具有2mm至10mm的平均厚度的硬涂层，其中 （a）硬涂层包含由Cr，Cr和B的复合氮化物构成的层，Cr的比例（原子比）为0.2〜0.45，B的比例（原子比） 相对于Al，Cr，B的总量为0.01〜0.1，（b）在表面覆盖切削工具的侧面上的边缘尖端100mm以内的区域，硬涂层具有粒状结晶 晶粒结构和粒状晶粒的平均晶粒尺寸在硬涂层的表面上为0.1mm至0.4mm。
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公开(公告)号：US20160027962A1
公开(公告)日：2016-01-28
申请号：US14806370
申请日：2015-07-22
申请人： RayVio Corporation
发明人： Yitao LIAO , Robert WALKER , Doug COLLINS
CPC分类号： H01L33/0075 , C23C14/0036 , C23C14/0617 , C23C14/0641 , C23C14/568 , C23C16/18 , C23C16/303 , C23C16/481 , C23C16/54 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0025 , H01L33/0062 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/32 , H01L2933/0091
摘要： A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.
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公开(公告)号：US20150376776A1
公开(公告)日：2015-12-31
申请号：US14768027
申请日：2014-02-13
发明人： Arindom Datta , Frank M. Cerio , Sandeep Kohli , Boris L. Druz
IPC分类号： C23C14/54
CPC分类号： C23C14/541 , C23C14/0617 , C23C14/34
摘要： A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C.
摘要翻译： 在物理气相沉积系统的连续过程中形成衬底上的材料薄膜，其中材料在具有在约500℃的温度以下进行的第一相的可变温度生长阶段期间沉积，并且材料是 随着第二相温度的变化，连续沉积到大约800℃以上
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