PRECURSOR FOR USE IN MANUFACTURING SUPERCONDUCTING WIRE, PRODUCTION METHOD OF PRECURSOR, AND SUPERCONDUCTING WIRE

    公开(公告)号:US20210359191A1

    公开(公告)日:2021-11-18

    申请号:US17284964

    申请日:2019-10-25

    Abstract: A precursor, which is a drawn wire product of a composite pipe, the composite pipe having: a composite wire group; a barrier layer; and a protective layer, wherein the composite wire group has: a plurality of tin wires each having at least one tin core being made of tin or a tin alloy, and a copper matrix which surrounds the at least one tin core; and a plurality of niobium wires each having a plurality of niobium cores being made of niobium or a niobium alloy, and a copper matrix which surrounds the plurality of niobium cores, the plurality of niobium wires being disposed such that each of the tin wires is surrounded by the niobium wires, the composite wire group contains titanium in an amount of from 0.38% by mass to 0.55% by mass.

    ELEMENT JOINT AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20210356058A1

    公开(公告)日:2021-11-18

    申请号:US17286924

    申请日:2019-12-04

    Abstract: The element joint is obtained by joining: a long pipe; a short pipe made of a quality of material having a strength equal to or higher than a strength of the long pipe; and a plate material made of a quality of material having a strength equal to or higher than a strength of the short pipe. In the element joint, at least one member of the long pipe and the short pipe includes a pipe-shaped portion, and the pipe-shaped portion of the one member is pipe-expanded and joined to the other member by press-fitting. The short pipe and the plate material are welded to each other.

    HOT FILAMENT CVD DEVICE
    44.
    发明申请

    公开(公告)号:US20210324520A1

    公开(公告)日:2021-10-21

    申请号:US17272524

    申请日:2019-08-19

    Abstract: Provided is a hot filament CVD device capable of performing coating treatment on a base material while stably correcting slack of a filament due to thermal expansion. The hot filament CVD device includes a chamber, a base material support that supports multiple base materials, multiple filaments, a first frame, a second frame, a power source, a drive unit, a drive control unit, a calculation unit, and a temperature information acquisition unit. The temperature information acquisition unit acquires information on temperature of the multiple filaments, the temperature changing with application of voltage. The calculation unit calculates an amount of thermal expansion of the multiple filaments based on the acquired information on temperature. The drive control unit causes the second frame to move apart from the first frame in accordance with the amount of thermal expansion calculated by the calculation unit.

    ARC WELDING METHOD
    45.
    发明申请

    公开(公告)号:US20210316386A1

    公开(公告)日:2021-10-14

    申请号:US17358492

    申请日:2021-06-25

    Abstract: Disclosed herein is an arc welding method including arc welding a steel sheet by a pulse control method, wherein: welding is performed using a welding wire and a gas containing Ar at a voltage pulse frequency of 50 Hz or more and 200 Hz or less and a voltage pulse width of 1.5 ms or more and 10 ms or less; and the welding wire contains C and further contains, in mass %: Si: 0.2% or more and 1.1% or less; Mn: 0.2% or more and 1.4% or less; and S: 0.010% or more and 0.050% or less, with the balance being Fe and inevitable impurities.

    THIN FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR LAYER

    公开(公告)号:US20210296501A1

    公开(公告)日:2021-09-23

    申请号:US17053537

    申请日:2019-04-23

    Abstract: A thin film transistor includes at least a gate electrode, a gate insulating film, an oxide semiconductor layer, source/drain electrodes, and at least one layer of a passivation film on a substrate. Metal elements constituting the oxide semiconductor layer include In, Ga, Zn, and Sn. Respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of the metal elements in the oxide semiconductor layer satisfy: In: 30 atom % or more and 45 atom % or less, Ga: 5 atom % or more and less than 20 atom %, Zn: 30 atom % or more and 60 atom % or less, and Sn: 4.0 atom % or more and less than 9.0 atom %.

    WELDING CONTROL DEVICE, DISPLAY CONTROL DEVICE, WELDING SYSTEM, WELDING CONTROL METHOD, AND PROGRAM

    公开(公告)号:US20210291288A1

    公开(公告)日:2021-09-23

    申请号:US17266861

    申请日:2019-08-07

    Abstract: This welding control device which controls a welding condition when arc welding is performed on a groove having a root gap, comprises: a first detection means for detecting, from a captured image of a fused section formed in the groove, the position of the tip of the fused section with respect to a direction in which the welding progresses; a second detection means for detecting the position of an end of a to-be-welded object for defining the root gap; a determination means for determining the relationship between the position of the end and the position of the tip of the fused section; and a control means for controlling the welding condition according to the determination result.

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