Abstract:
A system and method for a motor management system includes a computer readable storage medium and a processing unit. The processing unit configured to determine a voltage value of a voltage input to an alternating current (AC) motor, determine a frequency value of at least one of a voltage input and a current input to the AC motor, determine a load value from the AC motor, and access a set of motor nameplate data, where the set of motor nameplate data includes a rated power, a rated speed, a rated frequency, and a rated voltage of the AC motor. The processing unit is also configured to estimate a motor speed based on the voltage value, the frequency value, the load value, and the set of nameplate data and also store the motor speed on the computer readable storage medium.
Abstract:
An exemplary frame assembly (20) includes a first frame (21), a second frame (22), a third frame (23) accommodating at least part of the first frame and at least part of the second frame. The first, second and third frames cooperatively define an accommodating space of the frame assembly, and the positions of the first frame and the second frame relative to each other are adjustable such that the accommodating space has a desired size.
Abstract:
An exemplary TFT substrate includes a substrate, signal lines, a common electrode, and a pixel electrode. The signal lines are arranged on the substrate along two perpendicular directions. One of each two signal lines perpendicular to each other includes a plurality of segments. Every two adjacent segments are arranged on two opposite sides of the other signal line of the two signal lines. The TFT substrate further includes a connection line. The connection line interconnects the two adjacent segments. The common electrode is arranged in a same layer as the connection line, and overlaps the segmented signal line along a direction perpendicular to the substrate.
Abstract:
A circuitry testing method, comprising: providing a circuit board needing testing; applying a potential (160) to the circuit board needing testing so that the circuit board works and operating elements of the circuit board needing testing emit infrared rays; testing an intensity of radiation of the infrared rays using an infrared sensor (110); converting the radiation intensity to RGB (red, green, blue) data signals in order to form a diagnostic infrared image, using a processor (130); providing a standard infrared image; comparing the diagnostic infrared image with the standard infrared image; and determining whether the circuit board is defective according to the comparison.
Abstract:
A system and method for detecting cavitation in pumps for fixed and variable supply frequency applications is disclosed. The system includes a controller having a processor programmed to repeatedly receive real-time operating current data from a motor driving a pump, generate a current frequency spectrum from the current data, and analyze current data within a pair of signature frequency bands of the current frequency spectrum. The processor is further programmed to repeatedly determine fault signatures as a function of the current data within the pair of signature frequency bands, repeatedly determine fault indices based on the fault signatures and a dynamic reference signature, compare the fault indices to a reference index, and identify a cavitation condition in a pump based on a comparison between the reference index and a current fault index.
Abstract:
An exemplary anti-interference wiring assembly for a liquid crystal display device includes a base substrate (210), gate lines (201) formed at the base substrate, anti-interference wires (230), and data lines (202). The anti-interference wires are provided between the gate lines and the data lines and are insulated from the gate lines and the data lines respectively. The anti-interference wires are configured for carrying signals having a reverse phase compared to signals carried by the corresponding gate lines.
Abstract:
An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate (10) is provided and an amorphous silicon layer (12) is formed over the substrate. An excimer laser generator (13) for generating a pulse excimer laser beams collectively having the shape of a generally rectangular shaft is provided to melt a first area (15) of the amorphous silicon layer with the pulse excimer laser beams. The excimer laser generator is moved a distance to melt a second area of the amorphous layer spaced a short distance away from the first area. At least a subsequent third melted area spaced a short distance away from the second melted area is formed, with each subsequent melted area is spaced as short distance away from the immediately preceding melted area.
Abstract:
An exemplary electro-wetting display (EWD) device (30) includes: a first substrate (31); a second substrate (38) parallel to the first substrate; partition walls (34) arranged in a lattice on the second substrate thereby defining a plurality of pixel regions (P); a first fluid (35); and a second fluid (36). The first and second fluids are immiscible with each other and disposed between the first and second substrates. The second fluid is electro-conductive or polar. The first fluid is provided between the second substrate and the second fluid. Each pixel region includes two switch elements (315, 316) and a storage capacitor (336). The switch elements and the storage capacitor are disposed at a same side of the pixel region.
Abstract:
An exemplary electro-wetting display (EWD) device includes a plurality of sub-pixel units. Each sub-pixel unit defines two opposite long sides and two opposite short sides. Each sub-pixel unit includes a first substrate, a second substrate facing toward the first substrate, a conductive first liquid and a polar second sandwiched between the first substrate and the second substrate, and an electrode. The first and second liquids are immiscible. The electrode is disposed at a surface of the second substrate facing the first liquid. The electrode defines an opening. A length of the opening as measured parallel to the nearest short side is not less than 0.8 times a length of the nearest short side.
Abstract:
A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode and the substrate, an a-Si layer and a heavily doped a-Si layer on the gate insulating layer, a conductive film formed on the heavily doped a-Si layer, part of the a-Si layer, and the gate insulating layer, and a source electrode and a drain electrode on the conductive film. A work function of the conductive film is greater than a work function of the a-Si layer.