公开(公告)号：US07629650B2

公开(公告)日：2009-12-08

申请号：US11657008

申请日：2007-01-24

申请人： Tomohide Onogi ,  Yasuo Segawa

发明人： Tomohide Onogi ,  Yasuo Segawa

IPC分类号： H01L27/12

CPC分类号： H01L29/78609 ,  H01L27/12 ,  H01L27/124 ,  H01L29/78633

摘要： The invention prevents the reduction of a display quality caused by a light leak current of a thin film transistor used in a display device. A lower metal layer is formed on a substrate, and a buffer film, a semiconductor layer, a gate insulation film, and a gate wiring are formed thereon in this order. An interlayer insulation film having contact holes is formed on the gate wiring. A source wiring and a drain wiring connected to a source and a drain of the semiconductor layer through the contact holes respectively extend onto the interlayer insulation film. The source wiring, the drain wiring, and the lower metal layer extend from contact hole side respectively to cover a region that does not extend over an end of the gate wiring in the width direction on or under the semiconductor layer and the gate wiring.

摘要翻译： 本发明防止由显示装置中使用的薄膜晶体管的漏光电流引起的显示质量的降低。 在基板上形成下层金属层，依次形成缓冲膜，半导体层，栅极绝缘膜和栅极布线。 在栅极布线上形成具有接触孔的层间绝缘膜。 通过接触孔连接到半导体层的源极和漏极的源极布线和漏极布线分别延伸到层间绝缘膜上。 源极布线，漏极布线和下部金属层分别从接触孔侧延伸以覆盖在半导体层上的栅极配线的宽度方向上不延伸的区域和栅极布线。

公开(公告)号：US20080284962A1

公开(公告)日：2008-11-20

申请号：US11835734

申请日：2007-08-08

申请人： Masahiro HORIGUCHI ,  Hideki KANEKO ,  Hidetoshi MURAI ,  Hayato KURASAWA ,  Yasuo SEGAWA

发明人： Masahiro HORIGUCHI ,  Hideki KANEKO ,  Hidetoshi MURAI ,  Hayato KURASAWA ,  Yasuo SEGAWA

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/136218

摘要： A transverse field type liquid crystal display panel has multiple scan lines 12 and common wires 13 provided in parallel, multiple signal lines 17 provided in the direction crossing the scan lines 12, and common electrodes 14 and pixel electrodes 21 formed in the regions delimited by the multiple scan lines 12 and signal lines 17. At least part of the surface of an insulator laid over the scan lines 17 is covered by shield electrodes 22 constituted of a conductive material. Thanks to such structure, there can be provided a transverse field type—that is, an IPS mode or FFS mode—liquid crystal display panel that is equipped with a device for preventing burn-in due to the voltage that is applied to the scan lines.

摘要翻译： 横向型液晶显示面板具有多条扫描线12和平行设置的公共线13，沿与扫描线12交叉的方向设置的多个信号线17以及形成在由 多个扫描线12和信号线17。 布置在扫描线17上的绝缘体的表面的至少一部分被由导电材料构成的屏蔽电极22覆盖。 由于这种结构，可以提供横向场型，即IPS模式或FFS模式 - 液晶显示面板，其配备有用于防止由于施加到扫描线的电压引起的烧坏的装置 。

公开(公告)号：US20080259257A1

公开(公告)日：2008-10-23

申请号：US12098811

申请日：2008-04-07

申请人： Masaaki AOTA ,  Yasuo SEGAWA ,  Tomohide ONOGI

发明人： Masaaki AOTA ,  Yasuo SEGAWA ,  Tomohide ONOGI

IPC分类号： G02F1/1343 ,  G02F1/1335

CPC分类号： G02F1/134363 ,  G02F1/13439

摘要： A liquid crystal display includes: a pair of substrates; a liquid crystal layer sandwiched between the pair of substrates; an insulating layer provided for a first substrate of the pair of substrates; an upper electrode provided for the first substrate; and a lower electrode provided for the first substrate. The upper electrode is formed on the surface of the insulating layer adjacent to the liquid crystal layer. The upper electrode includes a plurality of branches each having a slit therebetween. The insulating layer has irregularities.

摘要翻译： 液晶显示器包括：一对基板; 夹在所述一对基板之间的液晶层; 为所述一对基板的第一基板设置的绝缘层; 设置在所述第一基板上的上电极; 以及设置在第一基板上的下电极。 上部电极形成在与液晶层相邻的绝缘层的表面上。 上电极包括多个分支，每个分支之间具有狭缝。 绝缘层具有不规则性。

公开(公告)号：US20080151167A1

公开(公告)日：2008-06-26

申请号：US12000075

申请日：2007-12-07

申请人： Masaaki Aota ,  Yasuo Segawa ,  Tomohide Onogi

发明人： Masaaki Aota ,  Yasuo Segawa ,  Tomohide Onogi

IPC分类号： G02F1/1333

CPC分类号： G02F1/134363 ,  G02F1/136204

摘要： A liquid crystal display device includes a first substrate, a second substrate, and liquid crystal. The first substrate includes pixel electrodes, at least one common electrode, and a circuit wiring. The second substrate is opposed to the first substrate and includes a translucent conductive film. The liquid crystal is held between the first substrate and the second substrate. The circuit wiring is arranged outside a pixel area in which a plurality of pixels, which are formed of the pixel electrodes and the at least one common electrode, are arranged. The translucent conductive film is arranged on an opposite side of the second substrate to a side where the liquid crystal is present, and the translucent conductive film is opposed to the pixel electrodes and the at least one common electrode. The translucent conductive film is maintained at a predetermined electric potential. The translucent conductive film has an outer periphery that is located closer to a center of the second substrate than an outer periphery of the second substrate.

摘要翻译： 液晶显示装置包括第一基板，第二基板和液晶。 第一衬底包括像素电极，至少一个公共电极和电路布线。 第二基板与第一基板相对并且包括半透明导电膜。 液晶保持在第一基板和第二基板之间。 电路布线布置在由像素电极和至少一个公共电极形成的多个像素的像素区域的外侧。 半透明导电膜被布置在第二基板的与存在液晶的一侧相反的一侧，并且透光性导电膜与像素电极和至少一个公共电极相对。 半透明导电膜保持在预定电位。 半透明导电膜具有比第二基板的外周更靠近第二基板的中心的外周。

公开(公告)号：US20080100762A1

公开(公告)日：2008-05-01

申请号：US11976391

申请日：2007-10-24

申请人： Tomohide Onogi ,  Yasuo Segawa

发明人： Tomohide Onogi ,  Yasuo Segawa

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/134372

摘要： An active matrix liquid crystal display device includes a pixel transistor, a wiring layer, a first insulating layer, a lower electrode layer, a second insulating layer, and an upper electrode layer. The wiring layer is connected to the pixel transistor. The first insulating layer is provided on the pixel transistor and the wiring layer. The lower electrode layer is provided on the first insulating layer and used as one of a common electrode layer and a pixel electrode layer. The second insulating layer is provided on the lower electrode layer. The upper electrode layer is provided on the second insulating layer and used as the other of the common electrode layer and the pixel electrode layer. The thickness t of the second insulating layer satisfies t [(∈0∈/W)×{(0.025381P)2/6}×k×ρON]/τON, where a display pixel has a substantially square shape and is composed of a plurality of sub pixels, a pitch at which the display pixels are arranged vertically and a pitch at which the display pixel are arranged horizontally are respectively P per 25.381 mm, the channel width of the pixel transistor is W, the on resistance per unit channel width of the pixel transistor is ρON, a period of time during which a gate line and drain line of the pixel transistor are simultaneously turned on is τON, a relative dielectric constant of the second insulating layer ∈, a vacuum dielectric constant is ∈0, a correction parameter is k. Liquid crystal molecules are driven by applying voltage between the upper electrode layer and the lower electrode layer.

摘要翻译： 有源矩阵液晶显示装置包括像素晶体管，布线层，第一绝缘层，下电极层，第二绝缘层和上电极层。 布线层连接到像素晶体管。 第一绝缘层设置在像素晶体管和布线层上。 下电极层设置在第一绝缘层上并用作公共电极层和像素电极层之一。 第二绝缘层设置在下电极层上。 上电极层设置在第二绝缘层上，用作公共电极层和像素电极层中的另一个。 第二绝缘层的厚度t满足t <[（0≤0/∈/ W）×{（0.025381 / P）≤0.2/ 6}] /（100×10 6 -9 ）和t> [（∈0∈/ W）x {（0.025381P）2/6} xkxrho ，其中栅极 像素晶体管的线路和漏极线同时导通是第二绝缘层∈的相对介电常数，真空介电常数为∈0 < 校正参数为k。 通过在上电极层和下电极层之间施加电压来驱动液晶分子。

公开(公告)号：US20080088785A1

公开(公告)日：2008-04-17

申请号：US11907479

申请日：2007-10-12

申请人： Yasuo Segawa ,  Masaaki Aota ,  Shinji Ichikawa

发明人： Yasuo Segawa ,  Masaaki Aota ,  Shinji Ichikawa

IPC分类号： G02F1/136

CPC分类号： G02F1/134363 ,  G02F1/133707 ,  G02F2001/134372

摘要： A liquid crystal display device having an upper electrode layer and a lower electrode layer formed on an identical substrate via an insulating layer includes slits formed on the upper electrode layer for applying voltage between the upper electrode layer and the lower electrode layer and driving liquid crystal molecules. Edge portions of the slits each include a first curved portion the tangential direction of which at the edge portions with respect to the rubbing direction falls within a range from 0° to +90° and a second curved portion the tangential direction of which at the edge portions with respect to the rubbing direction falls within the range from 0° to −90°. The direction toward an acute angle subtended by the long sides of the slits with respect to the rubbing direction is the positive direction. The second curved portion is smaller than the first curved portion.

摘要翻译： 具有通过绝缘层形成在同一基板上的上电极层和下电极层的液晶显示装置包括在上电极层上形成的用于在上电极层和下电极层之间施加电压的驱动液晶分子 。 狭缝的边缘部分包括第一弯曲部分，其在相对于摩擦方向的边缘部分处的切线方向落在0°至+ 90°的范围内，第二弯曲部分的切线方向在边缘 相对于摩擦方向的部分落在0°至-90°的范围内。 狭缝相对于摩擦方向的长边所对向的锐角方向为正方向。 第二弯曲部分小于第一弯曲部分。

公开(公告)号：US20070159565A1

公开(公告)日：2007-07-12

申请号：US11651464

申请日：2007-01-10

申请人： Yasuo Segawa ,  Tomohide Onogi

发明人： Yasuo Segawa ,  Tomohide Onogi

IPC分类号： G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78696

摘要： The invention is directed to reduction of a leak current of a TFT of a pixel caused by light from a backlight or external light to improve a display quality of a liquid crystal display device. The display device of the invention includes a plurality of pixels on a first substrate, where each of the pixels includes a gate line intersecting a semiconductor layer with a gate insulation film interposed therebetween, a drain line connected to a drain region through a first contact hole and covering an upper side of the semiconductor layer extending from an intersection, and a source electrode connected to a source region through a second contact hole and covering an upper side of the semiconductor layer extending from an intersection. The device further includes a light shield layer formed under the semiconductor layer with a buffer film interposed therebetween and shielding the semiconductor layer from light.

摘要翻译： 本发明旨在减少由来自背光或外部光的光引起的像素的TFT的泄漏电流，以提高液晶显示装置的显示质量。 本发明的显示装置包括第一基板上的多个像素，其中每个像素包括与半导体层相交的栅极线，栅极绝缘膜夹在其间，通过第一接触孔连接到漏区的漏极线 并且覆盖从交叉点延伸的半导体层的上侧，以及源电极，其通过第二接触孔连接到源极区域，并且覆盖从交叉点延伸的半导体层的上侧。 该器件还包括形成在半导体层之下的遮光层，其间插入有缓冲膜，并且遮蔽半导体层免受光照。

公开(公告)号：US07218370B2

公开(公告)日：2007-05-15

申请号：US10705222

申请日：2003-11-12

申请人： Yasuo Segawa ,  Masaaki Aota ,  Tsutomu Yamada

发明人： Yasuo Segawa ,  Masaaki Aota ,  Tsutomu Yamada

IPC分类号： G02F1/1339 ,  G02F1/1343

CPC分类号： G02F1/136286 ,  G02F1/1345

摘要： A gate line is severed before the gate line reaches an Output portion of a vertical driving circuit of a display device, and the separated gate lines are connected by a metal wiring in an upper layer. The gate line is, for example, made of molybdenum, chrome, a molybdenum alloy or a chrome alloy, and the metal is made of aluminum or an aluminum alloy. Since the gate line is severed, the voltage stored in the gate line during the manufacturing process will not be discharged to the gate wiring of the thin film transistor, preventing the break down of the gate insulating layer of the thin film transistor.

摘要翻译： 在栅极线到达显示装置的垂直驱动电路的输出部分之前，栅极线被切断，并且分离的栅极线通过上层的金属布线连接。 栅极线例如由钼，铬，钼合金或铬合金制成，金属由铝或铝合金制成。 由于栅极线被切断，在制造过程中存储在栅极线中的电压将不会被释放到薄膜晶体管的栅极布线，从而防止薄膜晶体管的栅极绝缘层的分解。

公开(公告)号：US07148545B2

公开(公告)日：2006-12-12

申请号：US10705223

申请日：2003-11-12

申请人： Yasuo Segawa ,  Masaaki Aota ,  Tsutomu Yamada

发明人： Yasuo Segawa ,  Masaaki Aota ,  Tsutomu Yamada

IPC分类号： H01L27/12

CPC分类号： H01L27/124 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78675

摘要： A first semiconductor layer that makes a capacitance coupling with a gate electrode of a thin film transistor through a gate insulating layer and a second semiconductor layer that makes a capacitance coupling with a storage capacitor line of a storage capacitor through the gate insulating layer are formed separately. Also, the first semiconductor layer and the second semiconductor layer are connected by a metal wiring. The gate electrode of the thin film transistor makes capacitance coupling with the first semiconductor layer and the storage capacitor line of the storage capacitor makes capacitance coupling with the second semiconductor layer independently. Voltage are induced in the first semiconductor layer and the second semiconductor layer independently. Since there will be no big discrepancy in voltage in the gate insulating layer, the dielectric break down and the leakage can be prevented.

摘要翻译： 分别形成通过栅极绝缘层与薄膜晶体管的栅电极电容耦合的第一半导体层和通过栅极绝缘层与存储电容器的辅助电容配线电容耦合的第二半导体层 。 此外，第一半导体层和第二半导体层通过金属布线连接。 薄膜晶体管的栅电极与第一半导体层进行电容耦合，并且存储电容器的辅助电容线与第二半导体层独立地进行电容耦合。 在第一半导体层和第二半导体层中独立地感应出电压。 由于栅极绝缘层的电压不会有很大的差异，所以介电分解，可以防止漏电。

公开(公告)号：US06778233B2

公开(公告)日：2004-08-17

申请号：US09995135

申请日：2001-11-27

申请人： Yoshiaki Matsuura ,  Yasuo Segawa ,  Masahiko Tokunaga

发明人： Yoshiaki Matsuura ,  Yasuo Segawa ,  Masahiko Tokunaga

IPC分类号： G02F113

CPC分类号： G02F1/1309 ,  G02F2001/136268

摘要： Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.

摘要翻译： 通过激光切割用于将多晶硅层20连接到像素电极28的接触件26的外围，以形成切割区域50.通过该切割区域50，还切断了接触件26周围的多晶硅层20。 因此，TFT 24与像素电极28和辅助电容器电极32分离，以可靠地实现变暗。