摘要:
The present invention relates to an active pixel sensor circuit and a method of operating same. In one embodiment, the active pixel sensor circuit includes a reset transistor having a gate, a source and a drain, a silicon rich oxide (SRO) photosensor having an anode and a cathode electrically coupled to the source of the reset transistor, and a readout transistor having a gate electrically coupled to the cathode of the SRO photosensor, a source and a drain.
摘要:
A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.
摘要:
A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.
摘要:
A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer.
摘要:
A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.
摘要:
A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface.
摘要:
A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.
摘要:
An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.
摘要:
An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.
摘要:
A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.