Active pixel sensor circuit
    41.
    发明授权
    Active pixel sensor circuit 有权
    有源像素传感器电路

    公开(公告)号:US08115846B2

    公开(公告)日:2012-02-14

    申请号:US12252039

    申请日:2008-10-15

    IPC分类号: H04N5/335 H04N5/217

    CPC分类号: H04N5/374

    摘要: The present invention relates to an active pixel sensor circuit and a method of operating same. In one embodiment, the active pixel sensor circuit includes a reset transistor having a gate, a source and a drain, a silicon rich oxide (SRO) photosensor having an anode and a cathode electrically coupled to the source of the reset transistor, and a readout transistor having a gate electrically coupled to the cathode of the SRO photosensor, a source and a drain.

    摘要翻译: 本发明涉及一种有源像素传感器电路及其操作方法。 在一个实施例中,有源像素传感器电路包括具有栅极,源极和漏极的复原晶体管,具有电耦合到复位晶体管的源极的阳极和阴极的富硅氧化物(SRO)光电传感器,以及读出 晶体管具有电耦合到SRO光电传感器的阴极的栅极,源极和漏极。

    METHOD OF FORMING OPTICAL SENSOR
    42.
    发明申请
    METHOD OF FORMING OPTICAL SENSOR 有权
    形成光传感器的方法

    公开(公告)号:US20100330735A1

    公开(公告)日:2010-12-30

    申请号:US12874203

    申请日:2010-09-01

    IPC分类号: H01L31/18

    摘要: A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

    摘要翻译: 形成光学传感器的方法包括以下步骤。 提供基板,并且在基板上形成读出装置。 电连接到读出装置的第一电极形成在基板上。 在第一电极上形成感光性富硅介电层,其中感光性富硅介电层包含多个纳米晶体硅晶体。 第二电极形成在感光富硅电介质层上。

    THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME
    44.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME 审中-公开
    显示面板的薄膜晶体管衬底和薄膜晶体管及其制造方法

    公开(公告)号:US20100012944A1

    公开(公告)日:2010-01-21

    申请号:US12400768

    申请日:2009-03-09

    IPC分类号: H01L29/04 H01L21/84

    CPC分类号: H01L29/78633 H01L29/78675

    摘要: A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer.

    摘要翻译: 提供了形成在透明基板上的薄膜晶体管(TFT)。 薄膜晶体管包括图案化半导体层,设置在图案化半导体层上的栅极绝缘层,设置在栅极绝缘层上的栅电极和图案化的光吸收层。 图案化的半导体层包括沟道区,以及设置在图案半导体层中的沟道区的两个相对侧上的源极区和漏极区。 图案化的光吸收层设置在透明基板和图案化的半导体层之间。

    TOUCH DISPLAY DEVICE
    46.
    发明申请
    TOUCH DISPLAY DEVICE 有权
    触摸显示设备

    公开(公告)号:US20130100079A1

    公开(公告)日:2013-04-25

    申请号:US13476009

    申请日:2012-05-20

    IPC分类号: G06F3/042

    摘要: A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface.

    摘要翻译: 触摸显示装置包括第一基板,第二基板,多个子像素区域,多个显示装置,多个第一光学触摸传感器装置和第二光学触摸传感器装置。 第一基板和第二基板相对设置。 显示装置分别设置在子像素区域中,以提供用于第一显示表面和第二显示表面的图像。 第一光学触摸传感器装置设置在第一基板上,并且至少对应于用于在第一显示表面上实现触摸输入功能的子像素区域的一部分。 第二光学触摸传感器装置设置在第一基板上,并且至少对应于用于在第二显示表面上实现触摸输入功能的子像素区域的一部分。

    Method of forming optical sensor
    47.
    发明授权
    Method of forming optical sensor 有权
    形成光学传感器的方法

    公开(公告)号:US08361818B2

    公开(公告)日:2013-01-29

    申请号:US12874203

    申请日:2010-09-01

    IPC分类号: H01L21/00

    摘要: A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

    摘要翻译: 形成光学传感器的方法包括以下步骤。 提供基板,并且在基板上形成读出装置。 电连接到读出装置的第一电极形成在基板上。 在第一电极上形成感光性富硅介电层,其中感光性富硅介电层包含多个纳米晶体硅晶体。 第二电极形成在感光富硅电介质层上。

    Optical sensor
    49.
    发明授权
    Optical sensor 有权
    光学传感器

    公开(公告)号:US07816751B2

    公开(公告)日:2010-10-19

    申请号:US12346857

    申请日:2008-12-31

    IPC分类号: H01L27/146

    摘要: An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

    摘要翻译: 光学传感器包括富硅介电光敏器件和读出器件。 富含硅的电介质光敏元件包括第一电极,第二电极和位于它们之间的感光性富硅介电层。 感光性富硅介电层在其中包含多个纳米晶体硅晶体。 读出装置电连接到富硅电介质光敏装置的第一电极,用于读出从感光富硅电介质层传输的光电信号。

    Method for fabricating photo sensor
    50.
    发明授权
    Method for fabricating photo sensor 有权
    光传感器的制造方法

    公开(公告)号:US07790487B2

    公开(公告)日:2010-09-07

    申请号:US12211106

    申请日:2008-09-16

    IPC分类号: H01L21/00

    摘要: A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.

    摘要翻译: 在非晶硅薄膜晶体管板上制造光电传感器的方法包括:形成具有底电极,富硅介电层和顶电极的光传感器,使得光传感器具有高可靠性。 该制造方法与薄膜晶体管的制造工艺兼容。