公开(公告)号：US20230145015A1

公开(公告)日：2023-05-11

申请号：US17912834

申请日：2021-03-19

Applicant: The Regents of the University of Michigan

Inventor： Mark Hammig ,  Nicholas Kotov

IPC: H01L31/08 ,  G01T1/36 ,  H01L31/0224 ,  H01L31/0384 ,  H01L31/18

CPC classification number: H01L31/085 ,  G01T1/366 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0384

Abstract: A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

公开(公告)号：US20190250101A1

公开(公告)日：2019-08-15

申请号：US16329280

申请日：2017-09-01

Applicant: Northwestern University

Inventor： Yuan Li ,  Xinqi Chen ,  Vinayak P. Dravid

IPC: G01N21/64 ,  C23C16/30 ,  C23C16/56 ,  C23C16/44 ,  C23C14/18 ,  H01L31/032 ,  H01L31/0384 ,  G01N21/65

CPC classification number: G01N21/648 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/18 ,  C23C14/24 ,  C23C16/305 ,  C23C16/4417 ,  C23C16/56 ,  G01N21/658 ,  H01L31/032 ,  H01L31/0384 ,  H01M4/36 ,  H01M4/38 ,  H01M4/581 ,  H01M4/583

Abstract: Provided herein are core-shell heterostructures design comprising a metal (e.g., noble metal) nanoparticle core and a transition metal dichalcogenide (TMD) shell, and methods of preparation and use thereof. In particular embodiments, the core-shell hetero structures described herein are synthesized by direct growth of a monolayer or multilayer fullerene-like TMD shell on a metal (e.g., noble metal) nanoparticle core, exhibit unique Raman scattering and photoluminescence characteristics, and are useful, for example, in plasmonic hot electron enhanced optics and optoelectronics.

公开(公告)号：US09806208B2

公开(公告)日：2017-10-31

申请号：US15615935

申请日：2017-06-07

Applicant: The United States of America, as represented by the Secretary of the Navy

Inventor： Jesse A. Frantz ,  Jason D. Myers ,  Colin C. Baker ,  Jasbinder S. Sanghera ,  Steven C. Erwin

IPC: H01L31/0216 ,  H01L31/032 ,  C23C14/06 ,  H01L31/0384 ,  H01L31/0368

CPC classification number: H01L31/02167 ,  C23C14/0623 ,  H01L31/032 ,  H01L31/0368 ,  H01L31/0384 ,  Y02E10/50

Abstract: A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by a ZnS matrix.

公开(公告)号：US09796920B2

公开(公告)日：2017-10-24

申请号：US15115043

申请日：2014-01-29

Applicant: DAICEL CORPORATION

Inventor： Shu Shimamoto ,  Toshikazu Nakamura

IPC: H01B1/20 ,  H01B1/22 ,  H01L31/00 ,  H01L33/50 ,  C09K11/02 ,  H01L31/0352 ,  H01L31/0384 ,  C09K11/56 ,  C09K11/88 ,  H01L31/0749 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/565 ,  C09K11/883 ,  H01B1/22 ,  H01L31/035218 ,  H01L31/0384 ,  H01L31/0749 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/948 ,  Y10S977/95

Abstract: Disclosed herein is a quantum dot composite that can maintain luminous efficiency per unit quantum dot even when a quantum dot concentration is high, and therefore can achieve a high emission intensity. The quantum dot composite includes: a matrix; and quantum dots dispersed in the matrix, wherein the matrix is composed of cellulose acetate having a compositional distribution index (CDI) of 3.0 or less, and a concentration of the quantum dots is 0.05 wt % or higher.

公开(公告)号：US09711668B2

公开(公告)日：2017-07-18

申请号：US13854165

申请日：2013-04-01

Applicant: Guala Technology Co., Ltd.

Inventor： Akira Nakazawa

IPC: H01L31/00 ,  H01L31/042 ,  H02N6/00 ,  H01L31/0384 ,  H01L31/0352 ,  H01L31/0236 ,  H01G9/20 ,  H01L31/0392 ,  H01M14/00 ,  H01L31/0296 ,  H01L31/072 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0384 ,  H01G9/2027 ,  H01G9/2031 ,  H01G9/2036 ,  H01G9/204 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/1828 ,  H01L2251/308 ,  H01M14/005 ,  Y02E10/50

Abstract: A photovoltaic cell is provided that enables cost reduction and stable operation with a simple configuration and enhances conversion efficiency by a new technology of forming an energy level in a band gap. In the photovoltaic cell, a substrate, a conductive first electrode, an electromotive force layer, a p-type semiconductor layer, and a conductive second electrode are laminated, electromotive force is generated by photoexciting the electron in the band gap of the electromotive force layer by light irradiation, the electromotive force layer is filled with an n-type metal oxide semiconductor of fine particles coated by an insulating coat, a new energy level is formed in a band gap by photoexcited structural change caused by ultraviolet irradiation, and efficient and stable operation can be performed by providing a layer of an n-type metal oxide semiconductor between the first electrode and the electromotive force layer.

公开(公告)号：US20160347996A1

公开(公告)日：2016-12-01

申请号：US15115043

申请日：2014-01-29

Applicant: DAICEL CORPORATION

Inventor： Shu SHIMAMOTO ,  Toshikazu NAKAMURA

IPC: C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L31/0352 ,  H01L31/0749

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/565 ,  C09K11/883 ,  H01B1/22 ,  H01L31/035218 ,  H01L31/0384 ,  H01L31/0749 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/948 ,  Y10S977/95

Abstract: Disclosed herein is a quantum dot composite that can maintain luminous efficiency per unit quantum dot even when a quantum dot concentration is high, and therefore can achieve a high emission intensity. The quantum dot composite includes: a matrix; and quantum dots dispersed in the matrix, wherein the matrix is composed of cellulose acetate having a compositional distribution index (CDI) of 3.0 or less, and a concentration of the quantum dots is 0.05 wt % or higher.

Abstract translation: 这里公开的是量子点复合物，即使量子点浓度高，也能够维持单位量子点的发光效率，因此能够实现高发光强度。 量子点复合物包括：矩阵; 和分散在基质中的量子点，其中基质由组成分布指数（CDI）为3.0以下的醋酸纤维素组成，量子点的浓度为0.05重量％以上。

公开(公告)号：US09472602B2

公开(公告)日：2016-10-18

申请号：US14835276

申请日：2015-08-25

Applicant: Xiaomi Inc.

Inventor： Duo Xu ,  Bin Lin ,  Jun Lei

IPC: H01L27/32 ,  H01L31/054 ,  G09F27/00 ,  G09F9/30 ,  H01L31/046 ,  H01L31/0376 ,  H01L31/0384 ,  H01L31/0392 ,  H01L51/52 ,  G02F1/133

CPC classification number: H01L27/3227 ,  G02F2001/13324 ,  G09F9/30 ,  G09F27/007 ,  H01L27/322 ,  H01L27/323 ,  H01L31/03762 ,  H01L31/0384 ,  H01L31/03925 ,  H01L31/046 ,  H01L31/0547 ,  H01L51/5275 ,  H01L51/5293 ,  Y02E10/52

Abstract: A display device is provided. A photovoltaic material (61) is evenly disposed in a display layer (6), so that an array formed by the photovoltaic material (61) forms light transmitting units (62) and the photovoltaic material (61) forms a path. Light emitted by a backlight layer (5) and ambient light are absorbed without affecting the light emission of the display layer (6), and are converted into current. When the current converted from light energy is used for a mobile terminal, the stand by time of the mobile terminal may be increased.

Abstract translation: 提供显示装置。 光电材料（61）被均匀地布置在显示层（6）中，使得由光电材料（61）形成的阵列形成光发射单元（62）并且光伏材料（61）形成路径。 由背光层（5）发射的光和环境光被吸收而不影响显示层（6）的发光，并被转换为电流。 当从光能转换的电流用于移动终端时，可以增加移动终端的待机时间。

公开(公告)号：US20160172611A1

公开(公告)日：2016-06-16

申请号：US15018321

申请日：2016-02-08

Applicant: InVisage Technologies, Inc.

Inventor： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC: H01L51/42 ,  H01L51/44

CPC classification number: H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US20150144879A1

公开(公告)日：2015-05-28

申请号：US14456214

申请日：2014-08-11

Applicant: InVisage Technologies, Inc.

Inventor： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC: H01L31/0352

CPC classification number: H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract translation: 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

公开(公告)号：US09040809B2

公开(公告)日：2015-05-26

申请号：US13685635

申请日：2012-11-26

Applicant: Saad Al Kenany ,  Marc Madou

Inventor： Saad Al Kenany ,  Marc Madou

IPC: H01G9/20 ,  H01L31/18 ,  H01L31/0384 ,  H01G9/22 ,  H01L31/0352

CPC classification number: H01L31/0384 ,  A61B2560/0214 ,  H01G9/2059 ,  H01G9/22 ,  H01L31/035218 ,  H01L31/18 ,  H01L31/1892 ,  Y02B10/12

Abstract: A nano power cell and method of use are described wherein the nano power cell absorbs electromagnetic energy is nano particles in an optical fluid that flow in microchannels of the nano power cell.