公开(公告)号：US20100025771A1

公开(公告)日：2010-02-04

申请号：US12473726

申请日：2009-05-28

申请人： Jan Hoentschel ,  Vassilios Papageorgiou ,  Belinda Hannon

发明人： Jan Hoentschel ,  Vassilios Papageorgiou ,  Belinda Hannon

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/092 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1033 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7847 ,  H01L29/7848

摘要： A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding strained semiconductor alloy, thereby additionally contributing to enhanced overall transistor performance. In other embodiments a silicon/carbon material may be formed in a P-channel transistor and an N-channel transistor, while the corresponding tensile strain component may be overcompensated for by means of a stress memorization technique in the P-channel transistor. Thus, the advantageous effects of the carbon species, such as enhancing overall dopant profile of P-channel transistors, may be combined with an efficient strain component while enhanced overall process uniformity may also be accomplished.

摘要翻译： 可以在适当的制造方案的基础上，以不同导电类型的晶体管提供硅/锗材料和硅/碳材料，而不会不利地导致整个工艺的复杂性。 此外，在形成相应的应变半导体合金之前，可以通过空腔的暴露的表面区域提供适当的注入物质，从而另外有助于提高总体晶体管性能。 在其它实施例中，硅/碳材料可以形成在P沟道晶体管和N沟道晶体管中，而相应的拉伸应变分量可以通过在P沟道晶体管中的应力存储技术过度补偿。 因此，可以将诸如增强P沟道晶体管的整体掺杂物分布的碳物质的有益效果与有效的应变分量组合，同时可以实现增强的整体工艺均匀性。