公开(公告)号：US20130187199A1

公开(公告)日：2013-07-25

申请号：US13753682

申请日：2013-01-30

申请人： CANON KABUSHIKI KAISHA

发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

IPC分类号： H01L27/148

CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region. In addition, a transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region, disposed under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域和与第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元和第三半导体区域 位于第二半导体区域上的第一导电类型的区域。 另外，传输栅电极设置在绝缘膜上并将载体从第二半导体区转移到第二导电类型的第四半导体区，具有栅电极的放大MOS晶体管连接到第四半导体区，并且 第二导电类型的第五半导体区域连续地设置在设置在栅电极下方的第二半导体区域上。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。