摘要:
According to an aspect of the present invention, there is provided an imaging device including: a plurality of pixels, each pixel including a photoelectric conversion unit that photoelectrically converts received light, a read node in which a signal charge generated in the photoelectric conversion unit is accumulated, and a first readout circuit that performs analog-to-digital conversion to convert a signal based on the signal charge accumulated in the read node into a digital signal; and a second readout circuit that reads a signal based on the signal charge, the signal having a smaller amplitude than a resolution of the analog-to-digital conversion of the first readout circuit.
摘要:
There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要:
A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.
摘要:
A semiconductor apparatus includes a stack of a first chip having a plurality of pixel circuits arranged in a matrix form and a second chip having a plurality of electric circuit arranged in a matrix form. A wiring path between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit or a positional relationship between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit is differentiated among the electric circuits.
摘要:
A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.
摘要:
A photoelectric conversion unit generates an amount of charges. A differential amplifier has first and second input transistors and is configured to output a current signal based on the amount of charges. A reset voltage providing unit is configured to provide a reset voltage for input nodes of the first and second input transistors. A transfer transistor is electrically connected to, and configured to transfer a charge to, the input node of the first input transistor. A reset transistor is electrically connected to one of the input nodes, and configured to control an electrical connection between the reset voltage providing unit and the input node connected to the reset transistor. A connection transistor has first and second nodes and is configured to control an electrical connection between the input nodes. The first and second nodes are connected to the input nodes of the first and second input transistors, respectively.
摘要:
An electronic device according to one or more embodiments of the invention comprises a plurality of first output lines and a plurality of current to voltage convertors. Current signals from a plurality of signal sources are output to the first output lines. Each of the current to voltage convertors are electrically connected to a corresponding one of the first output lines. The current to voltage convertor includes a first amplification unit. An offset reduction unit in a subsequent stage of the current to voltage convertor is provided for each of the first output lines.
摘要:
Conventionally, in order to obtain a difference signal between an A+N signal and an N signal and a difference signal between an A+B+N signal and the A+N signal, the A+N signal needs to be held in two different capacitors. Hence, there is a problem in that, due to variations in capacitance of the two capacitors, the difference signal between the A+N signal and the N signal and the difference signal between the A+B+N signal and the A+N signal may not accurately be obtained. An imaging device generates a signal obtained by subtracting the same digital N signal from each of the digital A+N signal and the digital A+B+N signal.
摘要翻译:通常,为了获得A + N信号和N信号之间的差分信号以及A + B + N信号与A + N信号之间的差分信号,A + N信号需要保持两种不同的信号 电容器 因此,存在这样的问题:由于两个电容器的电容变化,A + N信号与N信号之间的差信号与A + B + N信号与A + N信号之间的差分信号 可能无法准确获得。 成像装置产生通过从数字A + N信号和数字A + B + N信号中的每一个减去相同的数字N信号而获得的信号。
摘要:
A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.
摘要:
An electronic device according to one or more embodiments of the present invention comprises an output line, a current mirror circuit and a comparator. Current signals from a plurality of signal sources are output to the output line. The current mirror circuit is electrically connected to the output line. The comparator is configured to compare a mirrored current signal from the current mirror circuit with a reference current signal. The comparator is configured to output a signal representing a comparison result of amplitudes of the mirrored current signal and the reference current signal.