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51 条记录 (耗时 0.052 秒)

    Phosphor film, imaging assembly and inspection method
    41.
    发明申请
    Phosphor film, imaging assembly and inspection method 审中-公开
    荧光膜，成像组装及检验方法

    公开(公告)号：US20060214115A1

    公开(公告)日：2006-09-28

    申请号：US11088039

    申请日：2005-03-23

    申请人： Venkatesan Manivannan ,  Clifford Bueno ,  Steven Duclos ,  Stanley Stoklosa ,  Douglas Albagli ,  Paul Mc Connelee

    发明人： Venkatesan Manivannan ,  Clifford Bueno ,  Steven Duclos ,  Stanley Stoklosa ,  Douglas Albagli ,  Paul Mc Connelee

    IPC分类号： G01T1/00

    CPC分类号： G01T1/2018 ,  C09K11/02 ,  C09K11/675 ,  C09K11/684 ,  C09K11/7703 ,  C09K11/7733 ,  C09K11/7771 ,  C09K11/7787 ,  C09K11/7789 ,  G01T1/202 ,  G21K4/00

    摘要： An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

    摘要翻译： 提供了可适应的成像组件。 适应性成像组件包括独立荧光体膜，其被配置为接收入射辐射并发射相应的光信号。 电子设备耦合到独立荧光膜。 电子设备被配置为从独立荧光膜接收光信号并产生成像信号。 还提供了独立的荧光体膜，并且包括分散在硅酮粘合剂中的x射线荧光体颗粒。 还提供了用于检查部件的方法，包括将部件和独立的荧光体膜暴露于辐射，用自立式荧光膜产生相应的光信号，用与独立荧光体耦合的电子器件接收光信号 并使用该电子设备产生成像信号。

    Method and apparatus for identifying and correcting line artifacts in a solid state X-ray detector
    42.
    发明授权
    Method and apparatus for identifying and correcting line artifacts in a solid state X-ray detector 有权
    用于识别和校正固态X射线检测器中的线假象的方法和装置

    公开(公告)号：US06623161B2

    公开(公告)日：2003-09-23

    申请号：US09682386

    申请日：2001-08-28

    申请人： Richard Aufrichtig ,  Paul R. Granfors ,  Douglas Albagli ,  George E. Possin ,  John M. Boudry

    发明人： Richard Aufrichtig ,  Paul R. Granfors ,  Douglas Albagli ,  George E. Possin ,  John M. Boudry

    IPC分类号： G01D1800

    CPC分类号： G01N23/04 ,  A61B6/5258

    摘要： A method is provided for identifying detector elements in a solid state X-ray detector susceptible to causing line artifacts due to faulty detector elements that leak charge. A portion of the X-ray detector is covered by a radiation occluding material and the detector is exposed to a level of radiation sufficient to reach a predetermined threshold in the exposed portion of the detector. An image representative of the radiation is acquired and further analyzed to determine whether line artifacts exist. Data lines found to exhibit line artifacts are stored in the image processor.

    摘要翻译： 提供了一种用于识别固体X射线检测器中的检测器元件的方法，其易于由于泄漏电荷的检测器元件故障而导致线路伪影。 X射线检测器的一部分由辐射阻塞材料覆盖，并且检测器暴露于足以在检测器的暴露部分中达到预定阈值的辐射水平。 获取代表辐射的图像并进一步分析以确定是否存在线条伪影。 被发现呈现线条伪影的数据线被存储在图像处理器中。

    Diode design to reduce the effects of radiation damage
    44.
    发明授权
    Diode design to reduce the effects of radiation damage 有权
    二极管设计减少辐射损伤的影响

    公开(公告)号：US07259377B2

    公开(公告)日：2007-08-21

    申请号：US11300815

    申请日：2005-12-15

    申请人： Scott Stephen Zelakiewicz ,  Snezana Bogdanovich ,  Aaron Judy Couture ,  Douglas Albagli ,  William Andrew Hennessy

    发明人： Scott Stephen Zelakiewicz ,  Snezana Bogdanovich ,  Aaron Judy Couture ,  Douglas Albagli ,  William Andrew Hennessy

    IPC分类号： G01T1/24

    CPC分类号： G01T1/2928 ,  G01T1/2018

    摘要： A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

    摘要翻译： 用于X射线应用的光电检测器包括在每个像素位置处的光电二极管，其被门控以减少电荷从光电二极管的泄漏。 栅极层可以围绕检测器的整个周边边缘设置，并且与接触层保持在共同的电位，或者处于不同的电位。 钝化或介电层将栅极层与光电二极管分开。 通过栅极层减少可能由于延长的辐射暴露而导致的二极管边缘周围的泄漏。

    Spatially patterned light-blocking layers for radiation imaging detectors
    45.
    发明授权
    Spatially patterned light-blocking layers for radiation imaging detectors 有权
    用于辐射成像检测器的空间图案遮光层

    公开(公告)号：US07081628B2

    公开(公告)日：2006-07-25

    申请号：US10705091

    申请日：2003-11-10

    申请人： Paul Richard Granfors ,  Richard Aufrichtig ,  Douglas Albagli

    发明人： Paul Richard Granfors ,  Richard Aufrichtig ,  Douglas Albagli

    IPC分类号： G01T1/24

    CPC分类号： G01T1/2928 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

    摘要： Spatially patterned light-blocking layers for radiation imaging detectors are described. Embodiments comprise spatially patterned light-blocking layers for an amorphous silicon flat panel x-ray detector, wherein the spatially patterned light-blocking layer blocks light from a predetermined number of switching elements in the detector, wherein the predetermined number comprises less than all of the switching elements in the detector. These light-blocking layers may block light from each switching element in a predetermined arrangement of switching elements that are read out last, or in any other suitable pattern.

    摘要翻译： 描述了用于辐射成像检测器的空间图案遮光层。 实施例包括用于非晶硅平板X射线检测器的空间图案化阻光层，其中空间图案化阻光层阻挡来自检测器中预定数量的开关元件的光，其中预定数量包括小于全部 检测器中的开关元件。 这些遮光层可以以最后读出的开关元件的预定布置或以任何其它合适的图案阻挡来自每个开关元件的光。

    Thin film transistor for imaging system
    46.
    发明申请
    Thin film transistor for imaging system 审中-公开
    用于成像系统的薄膜晶体管

    公开(公告)号：US20060131669A1

    公开(公告)日：2006-06-22

    申请号：US11021526

    申请日：2004-12-22

    申请人： Douglas Albagli ,  William Hennessy ,  Aaron Couture ,  Christopher Collazo-Davila

    发明人： Douglas Albagli ,  William Hennessy ,  Aaron Couture ,  Christopher Collazo-Davila

    IPC分类号： H01L31/062

    CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L27/14658 ,  H01L29/78618

    摘要： An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.

    摘要翻译： 环形薄膜晶体管包括设置在半导体材料层之上的环形源电极，设置在环形源极内的半导体材料层之上的漏电极以及漏电极和环形源电极之间的有源沟道， 其中所述有源沟道的表面包括暴露的半导体材料。 此外，蛇形薄膜晶体管包括设置在半导体材料层上方的蛇形源极电极，设置在半导体材料层上方并且基本上在由蛇形源极电极形成的凹部内的漏电极，其中漏电极被配置为 基本上符合凹部，以及在漏电极和蛇形源电极之间的有源沟道，其中有源沟道具有基本一致的长度，并且其中有源沟道的表面包括暴露的半导体材料。

    Photodiode for imaging system and method of making
    47.
    发明申请
    Photodiode for imaging system and method of making 有权
    用于成像系统的光电二极管及其制造方法

    公开(公告)号：US20060065843A1

    公开(公告)日：2006-03-30

    申请号：US10955295

    申请日：2004-09-30

    申请人： William Hennessy ,  Douglas Albagli

    发明人： William Hennessy ,  Douglas Albagli

    IPC分类号： G01T1/20

    CPC分类号： G01T1/2018

    摘要： A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d′) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.

    摘要翻译： 一种具有公共电极的光检测器，其包括以非固体图案配置的导电材料，其中存在不存在导电材料的间隙。 在一个实施方案中，公共电极的导电部分之间的距离（d）或（d'）在约3微米至约5微米的范围内。 或者，在一个实施例中，图案化的公共电极覆盖相应光电传感器元件的表面的20％至70％之间。 还提供了制造该方法的方法。

    Storage capacitor design for a solid state imager
    48.
    发明申请
    Storage capacitor design for a solid state imager 有权
    存储电容设计为固态成像仪

    公开(公告)号：US20050078231A1

    公开(公告)日：2005-04-14

    申请号：US10687407

    申请日：2003-10-14

    申请人： Ji-Ung Lee ,  Douglas Albagli ,  George Possin ,  William Hennessy ,  Ching-Yeu Wei

    发明人： Ji-Ung Lee ,  Douglas Albagli ,  George Possin ,  William Hennessy ,  Ching-Yeu Wei

    IPC分类号： G01T1/20 ,  G02F1/136 ,  H01L21/02 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09

    CPC分类号： H01L27/14658

    摘要： Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    摘要翻译： 存储电容设计为固态成像仪。 成像器包括以成像阵列图案设置在基板上的若干像素。 每个像素包括耦合到薄膜开关晶体管的光电传感器。 若干扫描线沿着第一轴相对于衬底设置在第一水平面上，并且几个数据线沿着成像阵列的第二轴线设置在第二水平处。 沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。 每个像素包括与光电传感器并联耦合的存储电容器，存储电容器包括存储电容器电极和电容器公共电极。

    Repair method for low noise metal lines in thin film imager devices
    50.
    发明授权
    Repair method for low noise metal lines in thin film imager devices 失效
    薄膜成像设备中低噪声金属线路的修复方法

    公开(公告)号：US5616524A

    公开(公告)日：1997-04-01

    申请号：US580094

    申请日：1995-12-22

    申请人： Ching Y. Wei ,  Jianqiang Liu ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  George E. Possin ,  Douglas Albagli

    发明人： Ching Y. Wei ,  Jianqiang Liu ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  George E. Possin ,  Douglas Albagli

    IPC分类号： H01L21/66 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L27/146 ,  H01L21/465

    CPC分类号： H01L21/76892 ,  Y10T29/49162

    摘要： A method of repairing an open circuit defect in a damaged address line in a thin film electronic imager device includes the steps of forming a repair area on the device so as to expose the open-circuit defect in the damaged address line and then depositing a conductive material to form a second conductive component and to coincidentally form a repair shunt in the repair area so as to electrically bridge the defect. The step of forming the repair area includes the steps of ablating dielectric material disposed over the first conductive component in the repair area, and etching the repair area so as to remove dielectric material disposed over the defect in the address line in the repair area such that the surface of the address line conductive material is exposed but is not contaminated by the removal of the overlying dielectric material. A layer of photoresist is deposited over the imager device prior to forming the repair area, such that the photoresist layer is patterned during the ablating step and serves as a mask during the etch step.

    摘要翻译： 在薄膜电子成像装置中修复损坏的地址线中的开路缺陷的方法包括以下步骤：在设备上形成修复区域，以暴露损坏的地址线中的开路缺陷，然后沉积导电 材料以形成第二导电部件并且在修复区域中巧合地形成修复分路，从而电连接缺陷。 形成修复区域的步骤包括以下步骤：消除设置在修复区域中的第一导电部件上的介电材料，并蚀刻修复区域，以便去除在修复区域中的地址线上的缺陷上的介电材料，使得 地址线导电材料的表面被暴露，但不会被除去上覆电介质材料污染。 在形成修复区域之前，在成像器装置上沉积一层光致抗蚀剂，使得光刻胶层在烧蚀步骤期间被图案化，并在蚀刻步骤期间用作掩模。