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41.
公开(公告)号:US20090007051A1
公开(公告)日:2009-01-01
申请号:US11770303
申请日:2007-06-28
申请人: Anthony I. Chou , James S. Dunn , Brian M. Dufrene , Christopher H. Lumbra , Shreesh Narasimha , Christopher S. Putnam , BethAnn Rainey , Christopher M. Schnabel
发明人: Anthony I. Chou , James S. Dunn , Brian M. Dufrene , Christopher H. Lumbra , Shreesh Narasimha , Christopher S. Putnam , BethAnn Rainey , Christopher M. Schnabel
IPC分类号: G06F17/50
CPC分类号: G06F17/5068 , G06F2217/14 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要: A system, method and program product that allows multiple devices to be placed between pads such that a Back End Of Line (BEOL) mask change can be used to select different device options. A system is disclosed for implementing a testsite for characterizing devices in an integrated circuit technology, and includes: a system for designing a plurality of device options for a set of chip pads; a system for designing a pseudo wiring layout for each of the plurality of device options; a system for selecting one of the device options; a system for mapping the pseudo wiring layout for a selected device option to a predetermined design level; and a system for outputting a configured mask design at the predetermined design level having a wiring layout mapped for the selected device option.
摘要翻译: 一种允许多个设备放置在焊盘之间的系统,方法和程序产品,使得后端(BEOL)掩模更改可用于选择不同的设备选项。 公开了一种用于实现用于表征集成电路技术中的器件的测试现场的系统,并且包括:用于为一组芯片焊盘设计多个器件选项的系统; 用于为所述多个设备选项中的每一个设计伪布线布局的系统; 用于选择所述设备选项之一的系统; 用于将所选择的设备选项的伪布线布局映射到预定设计级的系统; 以及用于在具有针对所选择的设备选项映射的布线布局的预定设计级别处输出配置的掩模设计的系统。
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公开(公告)号:US07022626B2
公开(公告)日:2006-04-04
申请号:US10726450
申请日:2003-12-02
IPC分类号: H01L21/26
CPC分类号: H01L21/0214 , H01L21/02263 , H01L21/02337 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/51 , H01L29/518 , H01L29/78
摘要: Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.
摘要翻译: 公开了在半导体器件中形成氮氧化物电介质的方法。 在该方法中,在半导体器件上生长氧氮化物层。 然后将氮氧化合物层在约400℃的温度下退火约20分钟。 此外,退火可以在包括氧浓度小于约1至约10ppm的氮环境或氮环境中进行。
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