公开(公告)号：US20150200128A1

公开(公告)日：2015-07-16

申请号：US14155499

申请日：2014-01-15

Applicant: International Business Machines Corporation ,  Globalfoundries Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Murat Kerem Akarvardar ,  Jody A. Fronheiser ,  Kangguo Cheng ,  Bruce Doris ,  Kern Rim

IPC: H01L21/762 ,  H01L21/324 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L21/8234

CPC classification number: H01L21/76224 ,  H01L21/02532 ,  H01L21/3083 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: Forming a plurality of initial trenches that extend through a layer of silicon-germanium and into a substrate to define an initial fin structure comprised of a portion of the layer of germanium-containing material and a first portion of the substrate, forming sidewall spacers adjacent the initial fin structure, performing an etching process to extend the initial depth of the initial trenches, thereby forming a plurality of final trenches having a final depth that is greater than the initial depth and defining a second portion of the substrate positioned under the first portion of the substrate, forming a layer of insulating material over-filling the final trenches and performing a thermal anneal process to convert at least a portion of the first or second portions of the substrate into a silicon dioxide isolation material that extends laterally under an entire width of the portion of the germanium-containing material.

Abstract translation: 形成多个初始沟槽，其延伸穿过硅 - 锗层并进入衬底以限定由锗含量材料层的一部分和衬底的第一部分组成的初始鳍结构，形成邻近 初始鳍结构，执行蚀刻处理以延长初始沟槽的初始深度，由此形成多个最终深度大于初始深度的最终沟槽，并且限定位于第一部分第一部分下方的衬底的第二部分 所述衬底形成覆盖所述最终沟槽的绝缘材料层，并执行热退火工艺，以将所述衬底的所述第一或第二部分的至少一部分转化成二氧化硅隔离材料，所述二氧化硅隔离材料横向延伸在整个宽度 含锗材料的一部分。

公开(公告)号：US08853019B1

公开(公告)日：2014-10-07

申请号：US13798616

申请日：2013-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jody A. Fronheiser ,  Jeremy A. Wahl ,  Kerem Akarvardar ,  Ajey P. Jacob ,  Daniel T. Pham

IPC: H01L29/94 ,  H01L29/66 ,  B82Y40/00

CPC classification number: H01L29/42392 ,  B82Y40/00 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

Abstract: One method disclosed herein includes forming a layer of silicon/germanium having a germanium concentration of at least 30% on a semiconducting substrate, forming a plurality of spaced-apart trenches that extend through the layer of silicon/germanium and at least partially into the semiconducting substrate, wherein the trenches define a fin structure for the device comprised of a portion of the substrate and a portion of the layer of silicon/germanium, the portion of the layer of silicon/germanium having a first cross-sectional configuration, forming a layer of insulating material in the trenches and above the fin structure, performing an anneal process on the device so as to cause the first cross-sectional configuration of the layer of silicon/germanium to change to a second cross-sectional configuration that is different from the first cross-sectional configuration, and forming a final gate structure around at least a portion of the layer of silicon/germanium having the second cross-sectional configuration.

Abstract translation: 本文公开的一种方法包括在半导体衬底上形成具有至少30％的锗浓度的硅/锗层，形成多个间隔开的沟槽，其延伸穿过硅/锗层并且至少部分地进入半导体 衬底，其中所述沟槽限定由所述衬底的一部分和所述硅/锗层的一部分组成的器件的鳍结构，所述硅/锗层的所述部分具有第一横截面构造，形成层 的绝缘材料在沟槽中并在鳍结构之上，对器件进行退火处理，以使硅/锗层的第一截面构型变为不同于第二截面结构 第一横截面构造，以及围绕具有第二横截面的硅/锗层的至少一部分形成最终栅极结构 功能配置