公开(公告)号：US20220199810A1

公开(公告)日：2022-06-23

申请号：US17130121

申请日：2020-12-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Arkadiusz Malinowski ,  Alexander M. Derrickson ,  Ali Razavieh ,  Haiting Wang

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: A non-uniform base width bipolar junction transistor (BJT) device includes: a semiconductor substrate, the semiconductor substrate having an upper surface; and a BJT device, the BJT device comprising a collector region, a base region, and an emitter region positioned in the semiconductor substrate, the base region being positioned between the collector region and the emitter region; the base region comprising a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the BJT device.

公开(公告)号：US11152496B2

公开(公告)日：2021-10-19

申请号：US16776930

申请日：2020-01-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jagar Singh ,  Alexander L. Martin ,  Alexander M. Derrickson

IPC: H01L29/66 ,  H01L29/02 ,  H01L29/08 ,  H01L29/735 ,  H01L29/737 ,  H01L21/8222 ,  H01L29/06 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/285 ,  H01L29/45

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including: a semiconductor base on a first portion of a raised region of an insulative layer; a first inner emitter/collector (E/C) material on a second portion of the raised region of the insulative layer, wherein the inner E/C material is directly horizontally between the semiconductor base and a sidewall of the raised region; and a first outer E/C material on a first non-raised region of the insulative layer, wherein an upper portion of the first outer E/C material is adjacent the first inner E/C material.