公开(公告)号：US11916109B2

公开(公告)日：2024-02-27

申请号：US17804201

申请日：2022-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Peter Baars ,  Alexander M. Derrickson ,  Ketankumar Harishbhai Tailor ,  Zhixing Zhao ,  Judson R. Holt

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/735

CPC classification number: H01L29/1004 ,  H01L29/66234 ,  H01L29/735

Abstract: Embodiments of the disclosure provide a bipolar transistor structure having a base with a varying horizontal width and methods to form the same. The bipolar transistor structure includes a first emitter/collector (E/C) layer on an insulator layer. A base layer is over the insulator layer. A spacer between the first E/C layer and the base layer. The base layer includes a lower base region, and the spacer is adjacent to the lower base region and the first E/C layer. An upper base region is on the lower base region and the spacer. A horizontal width of the upper base region is larger than a horizontal width of the lower base region.

公开(公告)号：US11881395B2

公开(公告)日：2024-01-23

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US20230062013A1

公开(公告)日：2023-03-02

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US11588044B2

公开(公告)日：2023-02-21

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H03K17/60 ,  H01L29/10 ,  H01L29/06

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US20220173230A1

公开(公告)日：2022-06-02

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H03K17/60

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US11949004B2

公开(公告)日：2024-04-02

申请号：US17533882

申请日：2021-11-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Vibhor Jain ,  Alexander M. Derrickson

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7393 ,  H01L29/0649 ,  H01L29/66325

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.

公开(公告)号：US11843044B2

公开(公告)日：2023-12-12

申请号：US17578687

申请日：2022-01-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Alexander M. Derrickson ,  Judson R. Holt

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US11837653B2

公开(公告)日：2023-12-05

申请号：US17555561

申请日：2021-12-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jagar Singh ,  Alexander M. Derrickson ,  Alvin J. Joseph ,  Andreas Knorr ,  Judson R. Holt

IPC: H01L29/73 ,  H01L29/737 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/737 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625 ,  H01L29/66242

Abstract: Disclosed is a semiconductor structure with a lateral bipolar junction transistor (BJT). This semiconductor structure can be readily integrated into advanced silicon-on-insulator (SOI) technology platforms. Furthermore, to maintain or improve upon performance characteristics (e.g., cut-off frequency (fT)/maximum oscillation frequency (fmax) and beta cut-off frequency) that would otherwise be negatively impacted due to changing of the orientation of the BJT from vertical to lateral, the semiconductor structure can further include a dielectric stress layer (e.g., a tensilely strained layer in the case of an NPN-type transistor or a compressively strained layer in the case of a PNP-type transistor) partially covering the lateral BJT for charge carrier mobility enhancement and the lateral BJT can be configured as a lateral heterojunction bipolar transistor (HBT). Also disclosed is a method for forming the semiconductor structure.

公开(公告)号：US20230098557A1

公开(公告)日：2023-03-30

申请号：US17578687

申请日：2022-01-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Alexander M. Derrickson ,  Judson R. Holt

IPC: H01L29/735 ,  H01L29/417 ,  H01L29/08 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US20230083044A1

公开(公告)日：2023-03-16

申请号：US17457325

申请日：2021-12-02

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. Derrickson ,  John L. Lemon ,  Haiting Wang ,  Judson R. Holt

IPC: H01L29/735 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.