Method of forming embrittled areas inside wafer for division
    42.
    发明申请
    Method of forming embrittled areas inside wafer for division 有权
    在晶片内部形成脆化区域的划分方法

    公开(公告)号:US20080023456A1

    公开(公告)日:2008-01-31

    申请号:US11878449

    申请日:2007-07-24

    申请人: Yosuke Watanabe

    发明人: Yosuke Watanabe

    IPC分类号: B23K26/08

    摘要: A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

    摘要翻译: 一种在晶片内形成多层脆化区域的方法,以便即使在脆化区域相交的区域也能够正确地分割晶片。 在第一方向脆化步骤中,脆化区域形成为底层,在第二方向脆化步骤中,脆化区域形成为底层和第二层,在第一方向脆化步骤中,脆化区域形成为第二层 和第三层,然后交替地实施第二方向脆化步骤和第一方向脆化步骤,最后,在第二方向脆化步骤中,形成脆化区域作为顶层,使得未加工区域的长度 包含在不干扰分裂的范围内。