摘要:
Disclosed is a UV-visible laser system having ultrashort pulses with high power and/or high energy. The laser system includes at least one non-linear optical crystal (1) adapted for receiving two distinct ultrashort laser pulses (31, 32) in the visible or infrared domain emitted respectively by two distinct laser pulse sources (11, 12) and a temporal synchronization unit (41, 42) adapted so that the two ultrashort laser pulses (31, 32) are superimposed in time and space in the non-linear optical crystal (1) with any phase shift, and generate, by sum frequency, an ultrashort laser pulse (131) having an optical frequency equal to the sum of the respective optical frequencies of the two distinct laser pulses (31, 32).
摘要:
Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).
摘要:
A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
摘要:
A direct diode laser processing apparatus includes a laser oscillator that emits a multiple-wavelength laser beam, a transmission fiber that transmits the multiple-wavelength laser beam emitted from the laser oscillator, and a laser processing machine that condenses the multiple-wavelength laser beam transmitted through the transmission fiber and processes a workpiece. According to chromatic aberrations of the multiple-wavelength laser beam and the wavelength dependence of emissivity of the workpiece, a light intensity distribution of the multiple-wavelength laser beam in a thickness direction of the workpiece is provided with a plurality of peaks.
摘要:
A method of laser processing a material to form a separated part. The method includes focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or fault line along the laser beam focal line within the material, and directing a defocused carbon dioxide (CO2) laser from a distal edge of the material over the plurality of holes to a proximal edge of the material.
摘要:
Disclosed is a UV-visible laser system having ultrashort pulses with high power and/or high energy. The laser system includes at least one non-linear optical crystal (1) adapted for receiving two distinct ultrashort laser pulses (31, 32) in the visible or infrared domain emitted respectively by two distinct laser pulse sources (11, 12) and a temporal synchronisation unit (41, 42) adapted so that the two ultrashort laser pulses (31, 32) are superimposed in time and space in the non-linear optical crystal (1) with any phase shift, and generate, by sum frequency, an ultrashort laser pulse (131) having an optical frequency equal to the sum of the respective optical frequencies of the two distinct laser pulses (31, 32).
摘要:
A beam combining device causing beams from a plurality of light sources and one or a plurality of spare light sources to enter a beam combining optical system, and to be combined and output after passing through a beam combining element. The beam combining device is configured to: detect a failure in the plurality of light sources; and move at least a part of the respective light sources, the spare light source, and the beam combining optical system, to cause a beam to enter the beam combining optical system from the spare light source instead of a beam from the failed light source, and to cause the beam to be combined to beams from the plurality of light sources on an optical path after the beam combining element.
摘要:
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要:
A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.
摘要:
The invention discloses a device for laser material machining, with at least two laser beam sources (2a-2c) which emit laser beams (5a-5c) of different wavelengths, with associated beam imaging means (3a-3c), to configure appropriately the beam paths of each associated laser beam (5a-5c), a beam superposition device (6), to overlay the laser beams (5a-5c) on each other, and imaging optics (8), to image the overlaid laser beams (5a-5c) onto a workpiece (12) so that respective focal points are associated with the laser beams (5a-5c) in the focus of the imaging optics (8) on the workpiece (12), wherein the beam imaging means image the laser beams (5a-5c) onto the respective focal points in a predefined arrangement which can be varied by means of the beam imaging means (3a-3c). According to the invention, electronic control devices (4a-4c) are provided which are able to vary each of the outputs of the laser beams (5a-5c) with a high frequency to vary the intensities of the respective focal points at the focus of the imaging optics (8) in a predefined manner. In this way, a high frequency control of the parameters of laser material machining which can be combined with conventional modulation techniques is implemented.