Chemical-sensitization photoresist composition
    41.
    发明授权
    Chemical-sensitization photoresist composition 有权
    化学增感光刻胶组合物

    公开(公告)号:US6022666A

    公开(公告)日:2000-02-08

    申请号:US236567

    申请日:1999-01-26

    摘要: Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

    摘要翻译: 公开了能够赋予高分辨率的高耐热图案化抗蚀剂层的新型高灵敏度正负工作化学增感光致抗蚀剂组合物,而不受驻波的影响,具有非常正交的横截面轮廓。 该组合物通过用光化射线照射作为酸产生剂含有特定的氰基取代的肟磺酸酯化合物,例如α-(甲基磺酰氧基亚氨基)-4-甲氧基苄基氰化物。 当成膜树脂成分具有使重均分子量与数均分子量的比例不超过3.5的分子量分布时,通过使用该特定酸产生剂获得的优点是显着的。

    Negative-working chemical-sensitization photoresist composition
    42.
    发明授权
    Negative-working chemical-sensitization photoresist composition 有权
    负性化学增感光刻胶组合物

    公开(公告)号:US5990338A

    公开(公告)日:1999-11-23

    申请号:US179817

    申请日:1998-10-28

    摘要: Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.

    摘要翻译: 公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。 光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂,从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。 所提出的酸产生剂是由通式A [C(CN)= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物,其中每个R独立地为 未取代或取代的一价烃基如烷基,A是二价或三价有机基团,或优选亚苯基,下标n为2,当A为二价基团时,或3,当A为三价基团或 ,优选2.由于通过暴露于光化射线,一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来,化学增感光致抗蚀剂组合物表现出高的光敏性。