公开(公告)号：US20140268317A1

公开(公告)日：2014-09-18

申请号：US13799100

申请日：2013-03-13

Applicant: INTERMOLECULAR INC.

Inventor： Guowen Ding ,  Jeremy Cheng ,  Minh Huu Le ,  Daniel Schweigert ,  Zhi-Wen Wen Sun ,  Guizhen Zhang

IPC: G02B5/20 ,  C23C14/34

CPC classification number: G02B5/208 ,  C03C17/36 ,  C03C17/3644 ,  C03C17/366 ,  G02B5/281

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material

Abstract translation: 本文提供的实施例描述了用于形成低e板的低e板和方法。 提供透明基板。 在透明基板的上方形成反射层。 在反射层上方形成覆盖层。 覆盖层包括第一，第二和第三子层。 第二子层位于第一和第三子层之间，第一和第三子层包括相同的材料

公开(公告)号：US20140170413A1

公开(公告)日：2014-06-19

申请号：US13715477

申请日：2012-12-14

Applicant: INTERMOLECULAR INC.

Inventor： Mohd Fadzli Anwar Hassan ,  Guowen Ding ,  Minh Huu Le ,  Minh Anh Anh Nguyen ,  Zhi-Wen Wen Sun ,  Guizhen Zhang

IPC: H01B1/02

CPC classification number: H05K1/092 ,  C23C28/42 ,  C23C30/00 ,  H01L51/0097 ,  H01L51/5234 ,  H05K1/0274 ,  Y10T428/265

Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.

Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，使得导电叠层可以具有改善的延展性。