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公开(公告)号：US09121100B2
公开(公告)日：2015-09-01
申请号：US13715477
申请日：2012-12-14
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Guowen Ding , Minh Huu Le , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun , Guizhen Zhang
CPC classification number: H05K1/092 , C23C28/42 , C23C30/00 , H01L51/0097 , H01L51/5234 , H05K1/0274 , Y10T428/265
Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.
Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，允许导电叠层具有改善的延展性。
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2.发明申请Low-E Panels With Ternary Metal Oxide Dielectric Layer and Method For Forming The Same 有权具有三元金属氧化物介质层的低E面板及其形成方法公开(公告)号：US20150232378A1
公开(公告)日：2015-08-20
申请号：US14701053
申请日：2015-04-30
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Minh Huu Le , Yiwei Lu , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun
CPC classification number: C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/21 , C03C2217/228 , C03C2217/23 , C03C2217/26 , C03C2217/281
Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
Abstract translation: 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧化物层。 金属氧化物层包括第一元件，第二元件和第三元件。 在透明基板上形成反射层。 第一元素可以包括锡或锌。 第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。 金属氧化物层也可以包括氮。
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公开(公告)号：US20140170413A1
公开(公告)日：2014-06-19
申请号：US13715477
申请日：2012-12-14
Applicant: INTERMOLECULAR INC.
Inventor： Mohd Fadzli Anwar Hassan , Guowen Ding , Minh Huu Le , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun , Guizhen Zhang
IPC: H01B1/02
CPC classification number: H05K1/092 , C23C28/42 , C23C30/00 , H01L51/0097 , H01L51/5234 , H05K1/0274 , Y10T428/265
Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.
Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，使得导电叠层可以具有改善的延展性。
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公开(公告)号：US20150327366A1
公开(公告)日：2015-11-12
申请号：US14807336
申请日：2015-07-23
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Guowen Ding , Minh Huu Le , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun , Guizhen Zhang
CPC classification number: H05K1/092 , C23C28/42 , C23C30/00 , H01L51/0097 , H01L51/5234 , H05K1/0274 , Y10T428/265
Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.
Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，使得导电叠层可以具有改善的延展性。
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