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公开(公告)号:US08153347B2
公开(公告)日:2012-04-10
申请号:US12327937
申请日:2008-12-04
申请人: Janos Veres , Kurt M. Sanger
发明人: Janos Veres , Kurt M. Sanger
CPC分类号: G03F7/095 , G03F7/202 , G03F7/2022
摘要: A relief (or flexographic) printing precursor has first and second radiation-sensitive layers, or a plurality of radiation-sensitive layers. The first radiation-sensitive layer is sensitive to a first imaging radiation having a first λmax. The second radiation-sensitive layer is disposed on the first radiation-sensitive layer and is sensitive to a second imaging radiation having a second λmax that differs from the first λmax by at least 25 nm. An infrared radiation ablatable layer can be present and is opaque or insensitive to the first and second imaging radiations and contains an infrared radiation absorbing compound. These relief printing precursors can be used to prepare flexographic printing plates, cylinders, or sleeves where the ablatable layer is used to form an integral mask on the element. Use of the invention provides a relief image without any loss in the strength of the small dots and can be carried out using multiple irradiation steps using the same apparatus.
摘要翻译: 浮雕(或柔性版)印刷前体具有第一和第二辐射敏感层或多个辐射敏感层。 第一辐射敏感层对具有第一λmax的第一成像辐射敏感。 第二辐射敏感层设置在第一辐射敏感层上,并且对具有与第一λmax不同至少25nm的第二λmax的第二成像辐射敏感。 红外辐射可消融层可以存在并且对于第一和第二成像辐射是不透明的或不敏感的并且包含红外辐射吸收化合物。 这些浮雕印刷前体可用于制备柔性印版,圆柱体或套筒,其中可烧蚀层用于在元件上形成一体的掩模。 本发明的使用提供了一种浮雕图像,而没有任何损失的小点的强度,并且可以使用相同的装置使用多个照射步骤进行。
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公开(公告)号:US20080009625A1
公开(公告)日:2008-01-10
申请号:US11822594
申请日:2007-07-09
申请人: Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
发明人: Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
IPC分类号: C07D401/10 , C07C50/22 , C07D409/10 , C07F7/08 , H01L51/30
CPC分类号: C08L39/04 , C07F7/0805 , C07F7/081 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要: An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ε, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: (A) wherein: each of R1, R2, R3, R, R5, R6, R7, R8, R9, R10, R11, and R12, which may be the same or different, independently represents hydrogen; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (—CN); a carbamoyl group (—C(═O)NH2); a haloformyl group (—C(═O)—X, wherein X represents a halogen atom); a formyl group (—C(═O)—H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R2 and R3 and/or R8 and R9, may be cross-bridged to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula —N(Ra)— (wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R1—R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C40 saturated or unsaturated ring optionally interrupted by O, S or —N(Ra) where Ra is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.
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公开(公告)号:US20060155040A1
公开(公告)日:2006-07-13
申请号:US10539745
申请日:2003-12-18
申请人: Janos Veres , Paul Brookes , Richard Williams , Simon Ogier , Soad Mohlaldin-Khaffaf , Stephen Leeming
发明人: Janos Veres , Paul Brookes , Richard Williams , Simon Ogier , Soad Mohlaldin-Khaffaf , Stephen Leeming
IPC分类号: C08K5/01
CPC分类号: H01L51/0035 , H01L27/288 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/006 , H01L51/0512 , H01L51/052 , Y02E10/549
摘要: A composition for use as an organic semiconducting (OSC) material, the composition comprising: (i) at least one higher molecular weight organic semiconducting compound having a number average molecular weight (Mn) of at least 5000, and (ii) at least one lower molecular weight organic semiconducting compound having a number average molecular weight (Mn) of 1000 or less. Use of the composition in an electronic device, e.g. FET or OLED.
摘要翻译: 一种用作有机半导体(OSC)材料的组合物,该组合物包含:(i)至少一种数均分子量(M N n N)至少为5000的较高分子量的有机半导体化合物 ,和(ii)至少一种数均分子量(M N n N)为1000以下的低分子量有机半导体化合物。 在电子设备中使用组合物,例如, FET或OLED。
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