公开(公告)号：US06433269B1

公开(公告)日：2002-08-13

申请号：US09691071

申请日：2000-10-19

申请人： Hikaru Kobayashi ,  Hideomi Koinuma

发明人： Hikaru Kobayashi ,  Hideomi Koinuma

IPC分类号： H01L310288

CPC分类号： H01L31/186 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

摘要翻译： 在将非晶硅层形成在衬底上之后或在该层已经暴露于光之后，进行将氰离子（CN-）引入到非晶硅层中的氰化工艺。 例如，将衬底浸入容器中含有氰化钾（KCN）的水溶液中。 氰化工艺消除了沉积的非晶硅薄膜的光电导率降低的因素（例如，弱键，缺陷和复合中心），其可以在沉积膜中被识别。 结果，非晶硅层的光电导率从一开始就已经高于通常，并且即使在暴露于光时也几乎不降低。

公开(公告)号：US06265327B1

公开(公告)日：2001-07-24

申请号：US09098352

申请日：1998-06-17

申请人： Hikaru Kobayashi ,  Kenji Yoneda

发明人： Hikaru Kobayashi ,  Kenji Yoneda

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  H01J2237/3387 ,  H01L21/3144 ,  Y10S438/961

摘要： Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

摘要翻译： 公开了一种在半导体衬底的表面上形成绝缘膜的方法和装置，该方法和装置能够提高绝缘膜的质量和电气性能，而不需要采用高温加热和良好的可控性。 在清洁硅衬底的表面之后，在衬底表面上形成厚度为1-20nm的二氧化硅膜。 将硅衬底暴露于通过电子轰击产生的等离子体，同时将硅衬底保持在0℃至700℃的温度。因此，将氮原子并入二氧化硅膜中，获得具有良好的改性绝缘膜 电性能。