公开(公告)号：US11551756B2

公开(公告)日：2023-01-10

申请号：US17188046

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Marie Takada ,  Masanobu Shirakawa

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  G11C11/56

Abstract: A memory device according to one embodiment includes a memory cell array, bit lines, amplifier units, a controller, and a register. The memory cell array includes a memory cell that stores data nonvolatilely. The bit lines are connected to the memory cell array. The sense amplifier units are connected to the bit lines, respectively. The controller performs a write operation. The register stores status information of the write operation. The memory cell array includes a first storage region specified by a first address. The plurality of sense amplifier modules include a buffer region capable of storing data.