Automated Excavation Machine
    41.
    发明申请
    Automated Excavation Machine 有权
    自动挖掘机

    公开(公告)号:US20100109417A1

    公开(公告)日:2010-05-06

    申请号:US12648558

    申请日:2009-12-29

    CPC分类号: E21C41/16 E21C25/16 E21C35/24

    摘要: The present invention is directed to an excavator that is operable in manual and automatic modes and uses state machines to effect unit operations, rotationally offset swing actuators to rotate boom and cutter head, a fail safe hydraulic system to maintain gripper pressure in the event of a malfunction of the hydraulic system, differing position and pressure control functions in the hydraulic actuators, a kinematic module to effect pitch and roll adjustments, a cutting face profile generator to generate a profile of the excavation face, and an optimization module to realize a high degree of optimization of excavator operation.

    摘要翻译: 本发明涉及一种可在手动和自动模式下操作的挖掘机,并且使用状态机来实现单元操作,旋转地偏移摆动致动器以使悬臂和切割头旋转,故障安全液压系统在以下情况下保持夹持器压力 液压系统的故障,液压致动器中的不同的位置和压力​​控制功能,用于实现俯仰和滚动调节的运动模块,用于产生挖掘面的轮廓的切割面轮廓生成器,以及实现高度的优化模块 挖掘机运行优化。

    Method and system for deep sea drilling
    43.
    发明申请
    Method and system for deep sea drilling 审中-公开
    深海钻探方法与系统

    公开(公告)号:US20060016621A1

    公开(公告)日:2006-01-26

    申请号:US11149422

    申请日:2005-06-08

    IPC分类号: E21B15/02

    摘要: The present invention is directed to an underwater drilling system that includes a shuttle for transporting drill rods, geophysical tools, and/or core barrels from the underwater drilling platform to a surface vessel and/or a robotic vehicle to provide power to the underwater drilling platform and monitor and/or control the operation of the underwater drilling platform.

    摘要翻译: 本发明涉及一种水下钻井系统,其包括用于将钻杆,地球物理工具和/或核心筒从水下钻井平台输送到地面船和/或机器人车辆的梭子,以向水下钻井平台 并监测和/或控制水下钻井平台的运行。

    Excavation apparatus and method
    44.
    发明申请
    Excavation apparatus and method 有权
    挖掘装置和方法

    公开(公告)号:US20060000121A1

    公开(公告)日:2006-01-05

    申请号:US11112754

    申请日:2005-04-22

    IPC分类号: E02F1/00

    CPC分类号: E02F5/08 E02F3/20

    摘要: In one embodiment, an excavation method is provided that includes the steps of: (a) contacting a rotating powered cutting head 440 of an excavator 400 with an excavation face 452, wherein, at any one time, a first set of the cutting elements is in contact with the excavation face and a second set of the cutting elements is not in contact with the excavation face, the cutting head excavating the excavation face in at least a first direction; and (b) during the contacting step, using an elongated support member 404 extending from the excavator 400 to a powered device 118 to apply a force to the excavator 400 in at least the first direction to provide at least a portion of the cutting force. The powered device 118 is located at a distance from the excavator 400.

    摘要翻译: 在一个实施例中,提供了一种挖掘方法,其包括以下步骤:(a)将挖掘机400的旋转动力切割头440与挖掘面452接触,其中,在任何时间,第一组切割元件为 与挖掘面接触并且第二组切割元件不与挖掘面接触,切割头在至少第一方向上挖掘挖掘面; 和(b)在接触步骤期间,使用从挖掘机400延伸到动力装置118的细长支撑构件404,以在至少第一方向上向挖掘机400施加力以提供切削力的至少一部分。 动力装置118位于与挖掘机400一定距离处。

    CMOS devices hardened against total dose radiation effects
    45.
    发明授权
    CMOS devices hardened against total dose radiation effects 失效
    CMOS设备硬化总剂量辐射效应

    公开(公告)号:US06777753B1

    公开(公告)日:2004-08-17

    申请号:US09614682

    申请日:2000-07-12

    IPC分类号: H01L2976

    摘要: A CMOS or NMOS device has one or more n-channel FETs disposed on a substrate, the device being resistant to total dose radiation failures, the device further including a negative voltage source, for applying a steady negative back bias to the substrate of the n-channel FETs to mitigate leakage currents in the device, thereby mitigating total dose radiation effects. A method for operating a CMOS or NMOS device to resist total dose radiation failures, the device having one or more n-channel FETs disposed on a substrate, has the steps: (a) disposing the CMOS or NMOS device in a radiation environment, the radiation environment delivering a dose on the order of tens or hundreds of krad (Si) over the period of use of the CMOS device; and (b) applying a negative back bias to the substrate of the NMOS FETs, at a voltage for mitigating leakage currents about the n-channel FETs.

    摘要翻译: CMOS或NMOS器件具有设置在衬底上的一个或多个n沟道FET,该器件抵抗总剂量辐射故障,该器件还包括负电压源,用于向n的衬底施加稳定的负反向偏压 通道FET以减轻器件中的漏电流,从而减轻总剂量辐射效应。 一种用于操作CMOS或NMOS器件以抵抗总剂量辐射故障的方法,具有设置在衬底上的一个或多个n沟道FET的器件具有以下步骤:(a)将CMOS或NMOS器件设置在辐射环境中, 辐射环境在CMOS器件的使用期间内递送数十或数百克拉(Si)量级的剂量; 并且(b)在用于减轻围绕n沟道FET的漏电流的电压处施加负反向偏压到NMOS FET的衬底。