公开(公告)号：US20150191034A1

公开(公告)日：2015-07-09

申请号：US14669612

申请日：2015-03-26

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Gurtej S. Sandhu

IPC: B41N1/08 ,  B41N3/03

CPC classification number: B41N1/08 ,  B05D1/283 ,  B41N3/036 ,  B81C99/009 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  Y02C20/30 ,  Y10T428/24802

Abstract: Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

Abstract translation: 提供用于制造用于图案化衬底的印记和系统的方法以及由这些方法产生的器件。

公开(公告)号：US20140329179A1

公开(公告)日：2014-11-06

申请号：US13875918

申请日：2013-05-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Ranjan Khurana ,  Gurpreet S. Lugani ,  Dan B. Millward

IPC: G03F7/40

CPC classification number: G03F7/40 ,  G03F7/0002

Abstract: A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 形成半导体器件结构的方法包括在衬底上形成模板材料，该模板材料对嵌段共聚物的聚合物嵌段表现优先润湿。 在模板材料上形成正色调光致抗蚀剂材料。 正色光致抗蚀剂材料暴露于辐射以形成正色调光致抗蚀剂材料的光引射区域和非光照区域。 用负色调显影剂除去正色调光致抗蚀剂材料的非光引射区域以形成光刻胶特征图案。 模板材料的光致抗蚀剂特征图案和未保护部分的图案暴露于氧化等离子体以形成修整的光致抗蚀剂特征和模板特征图案。 用正色调显影剂除去修剪的光致抗蚀剂特征。 还描述了形成半导体器件结构的其它方法以及半导体器件结构。