公开(公告)号：US10828924B2

公开(公告)日：2020-11-10

申请号：US16004063

申请日：2018-06-08

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Gurtej S. Sandhu

IPC: B32B3/10 ,  B41N1/08 ,  B81C99/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/00 ,  B41N3/03 ,  B05D1/28

Abstract: Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

公开(公告)号：US09293328B2

公开(公告)日：2016-03-22

申请号：US14276204

申请日：2014-05-13

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward

IPC: G03F7/038 ,  H01L21/033 ,  H01L21/027 ,  G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  G03F7/16 ,  H01L29/02

CPC classification number: H01L21/0338 ,  G03F7/038 ,  G03F7/039 ,  G03F7/094 ,  G03F7/11 ,  G03F7/165 ,  H01L21/0271 ,  H01L21/0332 ,  H01L29/02

Abstract: Methods for adhering materials and methods for enhancing adhesion between materials are disclosed. In some embodiments, a polymer brush material is bonded to a base material, and a developable polymer resist material is applied over the grafted polymer brush material. The resist material is at least partially miscible in the grafted polymer brush material. As such, the resist material at least partially dissolves within the grafted polymer brush material to form an intertwined material of grafted polymer brush macromolecules and resist polymer macromolecules. Adhesion between the developable polymer resist and the base material may be thereby enhanced. Also disclosed are related semiconductor device structures.

Abstract translation: 公开了粘合材料的方法和用于增强材料之间的粘合力的方法。 在一些实施方案中，将聚合物刷材料结合到基材上，并将可显影聚合物抗蚀剂材料施加到接枝聚合物刷材料上。 抗蚀剂材料在接枝聚合物刷材料中至少部分可混溶。 因此，抗蚀剂材料至少部分地溶解在接枝的聚合物刷材料内以形成接枝聚合物刷大分子的交织的材料并且抵抗聚合物大分子。 因此，可显影聚合物抗蚀剂和基材之间的粘合力可以得到增强。 还公开了相关的半导体器件结构。

公开(公告)号：US09229328B2

公开(公告)日：2016-01-05

申请号：US13875918

申请日：2013-05-02

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Gurpreet S. Lugani ,  Dan B. Millward

IPC: G03F7/40

CPC classification number: G03F7/40 ,  G03F7/0002

Abstract: A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 形成半导体器件结构的方法包括在衬底上形成模板材料，该模板材料对嵌段共聚物的聚合物嵌段表现优先润湿。 在模板材料上形成正色调光致抗蚀剂材料。 正色光致抗蚀剂材料暴露于辐射以形成正色调光致抗蚀剂材料的光引射区域和非光照区域。 用负色调显影剂除去正色调光致抗蚀剂材料的非光引射区域以形成光刻胶特征图案。 模板材料的光致抗蚀剂特征图案和未保护部分的图案暴露于氧化等离子体以形成修整的光致抗蚀剂特征和模板特征图案。 用正色调显影剂除去修剪的光致抗蚀剂特征。 还描述了形成半导体器件结构的其它方法以及半导体器件结构。

公开(公告)号：US20150118821A1

公开(公告)日：2015-04-30

申请号：US14065662

申请日：2013-10-29

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  J. Neil Greeley

IPC: H01L21/306 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/31111 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/91

Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

Abstract translation: 形成半导体器件结构的方法包括在模具材料内形成包含沟槽的模具模板。 在模具模板的沟槽内形成结构。 执行湿移除过程以去除模具模板，湿移除过程的液体材料至少在湿移除过程之后的相邻结构对之间的空间中保留。 至少在相邻的结构对之间的空间中形成聚合物材料。 执行至少一个干移除处理以从至少相邻的结构对之间的空间去除聚合物材料。 还描述了形成半导体器件结构的附加方法以及形成电容器结构的方法。

公开(公告)号：US20140097520A1

公开(公告)日：2014-04-10

申请号：US13646131

申请日：2012-10-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Dan B. Millward

IPC: H01L21/32 ,  H01L29/06

CPC classification number: H01L29/0657 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/76816 ,  H01L27/10888

Abstract: A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 一种在衬底中形成开口阵列的方法。 该方法包括形成模板结构，该模板结构包括多个平行特征以及与衬底上的多个附加平行特征垂直相交的多个附加平行特征以限定孔，多个平行特征中的每一个具有基本相同的尺寸 以及作为多个附加平行特征中的每一个的相对间隔。 在每个孔中形成嵌段共聚物材料。 处理嵌段共聚物材料以形成限定开口图案的图案化聚合物材料。 开口的图案被转移到基板上以在基板中形成开口阵列。 还描述了形成半导体器件结构的方法和半导体器件结构。

公开(公告)号：US20130189492A1

公开(公告)日：2013-07-25

申请号：US13784353

申请日：2013-03-04

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Eugene P. Marsh

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81B1/00 ,  B81C1/00015 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  C08L2666/02

Abstract: Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract translation: 提供了利用自组装嵌段共聚物在表面上制备亚光刻纳米线性微通道阵列而不具有限定特征的方法，以及由这些方法形成的膜和器件。 该方法的实施方案使用多层诱导排序方法将层状膜与沟槽内的底层膜对准，并进行局部加热以使覆盖在沟槽上的层状相嵌段共聚物膜退出，并在剩余表面上向外退火。

公开(公告)号：US11560009B2

公开(公告)日：2023-01-24

申请号：US17063323

申请日：2020-10-05

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Gurtej S. Sandhu

IPC: B32B3/10 ,  B41N1/08 ,  B81C99/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/00 ,  B41N3/03 ,  B05D1/28

Abstract: Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

公开(公告)号：US20180366538A1

公开(公告)日：2018-12-20

申请号：US16108788

申请日：2018-08-22

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  J. Neil Greeley

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/02 ,  H01L21/311

Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

公开(公告)号：US09431605B2

公开(公告)日：2016-08-30

申请号：US14546897

申请日：2014-11-18

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Dan B. Millward

IPC: H01L21/20 ,  H01L45/00

CPC classification number: H01L45/1266 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1683

Abstract: A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

Abstract translation: 一种形成半导体器件结构的方法。 该方法包括在电极上形成包含至少两个不同结构域的嵌段共聚物组合物。 选择性地将至少一种金属前体偶联到嵌段共聚物组合物上以形成包含至少一个金属络合域和至少一个非金属络合域的金属络合嵌段共聚物组合物。 将金属络合的嵌段共聚物组合物退火以形成至少一种金属结构。 描述形成半导体器件结构的其它方法。 还描述了半导体器件结构。

公开(公告)号：US09276059B2

公开(公告)日：2016-03-01

申请号：US14176574

申请日：2014-02-10

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L23/58 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/00 ,  H01L21/28

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个重复单元，所述重复单元与至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。