公开(公告)号：US20050134533A1

公开(公告)日：2005-06-23

申请号：US10991243

申请日：2004-11-17

申请人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

发明人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

IPC分类号： G09G3/20 ,  G09G3/291 ,  G09G3/294 ,  G09G3/296 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H03K17/687 ,  G09G3/28

CPC分类号： G09G3/296 ,  G09G3/282 ,  G09G3/294 ,  G09G2300/0408 ,  G09G2310/0289 ,  G09G2330/04

摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。