Patent search ap:("Micron Technology Page Inc.") AND inv:"Byeung Chul Kim"

41.

发明申请
Integrated Circuitry Comprising An Array, Method Of Forming An Array, Method Of Forming DRAM Circuitry, And Method Used In The Fabrication Of Integrated Circuitry 审中-公开

公开(公告)号：US20200098761A1

公开(公告)日：2020-03-26

申请号：US16139816

申请日：2018-09-24

Applicant: Micron Technology, Inc.

Inventor： Cornel Bozdog , Abhilasha Bhardwaj , Byeung Chul Kim , Michael E. Koltonski , Gurtej S. Sandhu , Matthew Thorum

IPC: H01L27/108 , H01L23/522 , H01L23/528

Abstract: Integrated circuitry comprising an array comprises a plurality of conductive vias. Individual of the vias comprise an upper horizontal perimeter comprising opposing end portions. One of the opposing end portions comprises opposing straight sidewalls. The other of the opposing end portions comprises opposing curved sidewalls that join with the opposing straight sidewalls of the one opposing end portion. Other embodiments, including methods, are disclosed.

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