公开(公告)号：US20230253465A1

公开(公告)日：2023-08-10

申请号：US17666844

申请日：2022-02-08

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Damir Fazil ,  Michael E. Koltonski

IPC: H01L21/28 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11529 ,  H01L27/11556

CPC classification number: H01L29/40117 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11529 ,  H01L27/11556

Abstract: A memory array comprises strings of memory cells. The memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Channel-material-string constructions of memory cells extend through the insulative tiers and the conductive tiers. The channel material of the channel-material-string constructions is directly electrically coupled to conductor material of the conductor tier. Substructure material is in the conductor tier and spans laterally-across and laterally-between bottoms of multiple of the channel-material-string constructions. The substructure material is of different composition from an upper portion of the conductor material. The substructure material comprises laterally-opposing sides that taper laterally-inward moving deeper into the conductor tier. Other embodiments, including method, are disclosed.

公开(公告)号：US12020955B2

公开(公告)日：2024-06-25

申请号：US17447760

申请日：2021-09-15

Applicant: Micron Technology, Inc.

Inventor： Michael E. Koltonski

IPC: H01L21/67 ,  F28D1/02 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  F28D1/0213 ,  H01J37/32091 ,  H01J37/32724 ,  H01L21/3065

Abstract: A system for fabricating a semiconductor device structure includes a tool comprising a chamber and a platform within the chamber configured to receive a semiconductor device structure thereon. The tool further includes a heating and cooling system in operable communication with the platform and configured to control a temperature of the platform. The heating and cooling system comprises a cooling system including a cold tank for containing a cold thermal transfer fluid, the cold tank configured to be in fluid communication with the platform, thermal transfer fluid supply piping, and thermal transfer fluid return piping, a heating system including a hot tank for containing a hot thermal transfer fluid having a higher temperature than the cold thermal transfer fluid, the hot tank configured to be in fluid communication with the platform, the thermal transfer fluid supply piping, and the thermal transfer fluid return piping, and at least one temporary storage tank configured to receive at least some of the cold thermal transfer fluid or the hot thermal transfer fluid from at least the thermal transfer fluid return piping after switching a thermal load from the platform from one of the cooling system or the heating system to the other of the cooling system or the heating system. Related methods and tools are disclosed.

公开(公告)号：US20230335439A1

公开(公告)日：2023-10-19

申请号：US17720695

申请日：2022-04-14

Applicant: Micron Technology, Inc.

Inventor： Chandra S. Tiwari ,  David A. Kewley ,  Deep Panjwani ,  Matthew Holland ,  Matthew J. King ,  Michael E. Koltonski ,  Tom J. John ,  Xiaosong Zhang ,  Yi Hu

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76897 ,  H01L23/53295 ,  H01L21/76832 ,  H01L27/11521

Abstract: A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures. Memory cells vertically extend through the stack structure, and comprise a channel material vertically extending through the stack structure. An additional stack structure vertically overlies the stack structure and comprises additional conductive structures and additional insulative structures. First pillar structures extend through the additional stack structure and vertically overlie a portion of the memory cells. Second pillar structures are adjacent to the first pillar structures and extend through the additional stack structure and vertically overlie another portion of the memory cells. Slot structures are laterally adjacent to the first pillar structures and to the second pillar structures and extend through at least a portion of the additional stack structure. A distance between the first pillar structures and the slot structures is substantially equal to a distance between the second pillar structures and the slot structures.

公开(公告)号：US20150340209A1

公开(公告)日：2015-11-26

申请号：US14282532

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Michael E. Koltonski

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3288 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68742 ,  Y10T29/49732

Abstract: A focus ring replacement method for a plasma reactor, and associated systems and methods are disclosed herein. In one embodiment, a plasma processing system includes a plasma reactor and a wafer handler. The plasma reactor includes a processing chamber defining an enclosure and having a chamber opening accessible to the enclosure. A wafer holder assembly is positioned within the enclosure and configured to hold a semiconductor wafer and a focus ring that surrounds the semiconductor wafer. The wafer handler is configured to transport the focus ring through the chamber opening, and the wafer holder assembly is further configured to transfer the focus ring between the wafer handler and the wafer holder assembly.

Abstract translation: 本文公开了一种用于等离子体反应器的聚焦环替换方法及其相关系统和方法。 在一个实施例中，等离子体处理系统包括等离子体反应器和晶片处理器。 等离子体反应器包括限定外壳的处理室，并且具有可由外壳访问的室开口。 晶片保持器组件定位在外壳内并被配置为保持围绕半导体晶片的半导体晶片和聚焦环。 晶片处理器被配置为将聚焦环传送通过室开口，并且晶片保持器组件进一步构造成将聚焦环转移在晶片处理器和晶片保持器组件之间。

公开(公告)号：US20240321603A1

公开(公告)日：2024-09-26

申请号：US18732053

申请日：2024-06-03

Applicant: Micron Technology, Inc.

Inventor： Michael E. Koltonski

IPC: H01L21/67 ,  F28D1/02 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  F28D1/0213 ,  H01J37/32091 ,  H01J37/32724 ,  H01L21/3065

Abstract: A system for fabricating a semiconductor device structure includes a tool comprising a chamber and a platform within the chamber configured to receive a semiconductor device structure thereon. The tool further includes a heating and cooling system in operable communication with the platform and configured to control a temperature of the platform. The heating and cooling system comprises a cooling system including a cold tank for containing a cold thermal transfer fluid, the cold tank configured to be in fluid communication with the platform, thermal transfer fluid supply piping, and thermal transfer fluid return piping, a heating system including a hot tank for containing a hot thermal transfer fluid having a higher temperature than the cold thermal transfer fluid, the hot tank configured to be in fluid communication with the platform, the thermal transfer fluid supply piping, and the thermal transfer fluid return piping, and at least one temporary storage tank configured to receive at least some of the cold thermal transfer fluid or the hot thermal transfer fluid from at least the thermal transfer fluid return piping after switching a thermal load from the platform from one of the cooling system or the heating system to the other of the cooling system or the heating system. Related methods and tools are disclosed.

公开(公告)号：US20220005711A1

公开(公告)日：2022-01-06

申请号：US17447760

申请日：2021-09-15

Applicant: Micron Technology, Inc.

Inventor： Michael E. Koltonski

IPC: H01L21/67 ,  H01L21/3065 ,  F28D1/02 ,  H01J37/32

Abstract: A system for fabricating a semiconductor device structure includes a tool comprising a chamber and a platform within the chamber configured to receive a semiconductor device structure thereon. The tool further includes a heating and cooling system in operable communication with the platform and configured to control a temperature of the platform. The heating and cooling system comprises a cooling system including a cold tank for containing a cold thermal transfer fluid, the cold tank configured to be in fluid communication with the platform, thermal transfer fluid supply piping, and thermal transfer fluid return piping, a heating system including a hot tank for containing a hot thermal transfer fluid having a higher temperature than the cold thermal transfer fluid, the hot tank configured to be in fluid communication with the platform, the thermal transfer fluid supply piping, and the thermal transfer fluid return piping, and at least one temporary storage tank configured to receive at least some of the cold thermal transfer fluid or the hot thermal transfer fluid from at least the thermal transfer fluid return piping after switching a thermal load from the platform from one of the cooling system or the heating system to the other of the cooling system or the heating system. Related methods and tools are disclosed.

公开(公告)号：US20210381107A1

公开(公告)日：2021-12-09

申请号：US16891687

申请日：2020-06-03

Applicant: Micron Technology, Inc.

Inventor： John A. Smythe ,  Gurtej S. Sandhu ,  Sumeet C. Pandey ,  Michael E. Koltonski

IPC: C23C16/503 ,  C23C16/32 ,  C23C16/38

Abstract: A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

公开(公告)号：US11672118B2

公开(公告)日：2023-06-06

申请号：US17013047

申请日：2020-09-04

Applicant: Micron Technology, Inc.

Inventor： Shyam Surthi ,  Richard J. Hill ,  Gurtej S. Sandhu ,  Byeung Chul Kim ,  Francois H. Fabreguette ,  Chris M. Carlson ,  Michael E. Koltonski ,  Shane J. Trapp

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: An electronic device comprising a cell region comprising stacks of alternating dielectric materials and conductive materials. A pillar region is adjacent to the cell region and comprises storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region. The storage node segments are separated by a vertical portion of the tunnel region. A high-k dielectric material is adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

公开(公告)号：US11164759B2

公开(公告)日：2021-11-02

申请号：US15976623

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Michael E. Koltonski

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  F28D1/02

Abstract: A system for fabricating a semiconductor device structure includes a tool comprising a chamber and a platform within the chamber configured to receive a semiconductor device structure thereon. The tool further includes a heating and cooling system in operable communication with the platform and configured to control a temperature of the platform. The heating and cooling system comprises a cooling system including a cold tank for containing a cold thermal transfer fluid, the cold tank configured to be in fluid communication with the platform, thermal transfer fluid supply piping, and thermal transfer fluid return piping, a heating system including a hot tank for containing a hot thermal transfer fluid having a higher temperature than the cold thermal transfer fluid, the hot tank configured to be in fluid communication with the platform, the thermal transfer fluid supply piping, and the thermal transfer fluid return piping, and at least one temporary storage tank configured to receive at least some of the cold thermal transfer fluid or the hot thermal transfer fluid from at least the thermal transfer fluid return piping after switching a thermal load from the platform from one of the cooling system or the heating system to the other of the cooling system or the heating system. Related methods and tools are disclosed.

公开(公告)号：US10943907B2

公开(公告)日：2021-03-09

申请号：US16869316

申请日：2020-05-07

Applicant: Micron Technology, Inc.

Inventor： Cornel Bozdog ,  Abhilasha Bhardwaj ,  Byeung Chul Kim ,  Michael E. Koltonski ,  Gurtej S. Sandhu ,  Matthew Thorum

IPC: H01L21/108 ,  H01L23/528 ,  H01L23/522 ,  H01L21/822 ,  H01L27/108

Abstract: Integrated circuitry comprising an array comprises a plurality of conductive vias. Individual of the vias comprise an upper horizontal perimeter comprising opposing end portions. One of the opposing end portions comprises opposing straight sidewalls. The other of the opposing end portions comprises opposing curved sidewalls that join with the opposing straight sidewalls of the one opposing end portion. Other embodiments, including methods, are disclosed.