公开(公告)号：US5453135A

公开(公告)日：1995-09-26

申请号：US174011

申请日：1993-12-28

申请人： Katsumi Nakagawa ,  Noboru Toyama ,  Toshihiro Yamashita

发明人： Katsumi Nakagawa ,  Noboru Toyama ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/06

CPC分类号： H01L31/056 ,  H01L31/022483 ,  H01L31/0392 ,  H01L31/076 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： A photoelectric conversion device comprising at least a metal layer, a transparent conductive layer disposed on said metal layer, and an active semiconductor layer disposed on said transparent conductive layer, characterized in that said transparent conductive layer comprises a layer having an uneven surface which is composed of a zinc oxide material having an X-ray diffraction pattern in which (a) the peak intensity of the (2,0,0) planes of ZnO.sub.2 is 1/200 or less of (b) the peak intensity of the (0,0,2) planes of ZnO and (c) the peak intensity of the (1,0,1) planes of Zn is 1/200 or less of the peak intensity (b).

摘要翻译： 一种光电转换装置，其至少包括金属层，设置在所述金属层上的透明导电层和设置在所述透明导电层上的有源半导体层，其特征在于，所述透明导电层包括具有凹凸表面的层， 的具有X射线衍射图的氧化锌材料，其中（a）ZnO 2的（2,0,0）面的峰强度为（b）的（O， 0,2）平面，（c）Zn的（1,0,1）面的峰强度是峰强度（b）的1/200以下。