THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    41.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20150187813A1

    公开(公告)日:2015-07-02

    申请号:US14659120

    申请日:2015-03-16

    Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

    Abstract translation: 公开了薄膜晶体管阵列面板。 薄膜晶体管阵列面板可以包括设置在基板上并包括栅电极的栅极线,包括设置在基板上的氧化物半导体的半导体层,设置在基板上的数据布线层,并且包括与栅极线交叉的数据线 连接到数据线的源电极和面对源电极的漏电极,覆盖源电极和漏电极的聚合物层和设置在聚合物层上的钝化层。 数据布线层可以包括铜或铜合金,并且聚合物层可以包括碳氟化合物。

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