公开(公告)号：US20150123075A1

公开(公告)日：2015-05-07

申请号：US14304008

申请日：2014-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. Hatcher ,  Mark S. Rodder ,  Robert C. Bowen ,  Jorge A. Kittl

IPC: H01L29/10 ,  H01L29/15 ,  H01L29/78

CPC classification number: H01L29/7781 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/122 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66431 ,  H01L29/785

Abstract: Integrated circuit devices including strained channel regions and methods of forming the same are provided. The integrated circuit devices may include enhancement-mode field effect transistors. The enhancement-mode field effect transistors may include a quantum well channel region having a well thickness TW sufficient to yield a strain-induced splitting of a plurality of equivalent-type electron conduction states therein to respective unequal energy levels including a lowermost energy level associated with a lowermost surface roughness scattering adjacent a surface of the channel region when, the surface is biased into a state of inversion.

Abstract translation: 提供包括应变通道区域的集成电路器件及其形成方法。 集成电路器件可以包括增强型场效应晶体管。 增强型场效应晶体管可以包括具有足够的阱厚度TW的量子阱沟道区，其足以产生其中的多个等效电子传导状态的应变引起的分裂到相应的不等能级，包括与 当表面被偏置到反转状态时，邻近通道区域的表面的最低表面粗糙度散射。