公开(公告)号：US20170345945A1

公开(公告)日：2017-11-30

申请号：US15373065

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20160056269A1

公开(公告)日：2016-02-25

申请号：US14749037

申请日：2015-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Jung LEE ,  Bonyoung KOO ,  Sunjung KIM ,  Jongryeol YOO ,  Seung Hun LEE ,  Poren TANG

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L29/66795 ,  H01L21/3085 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823807

Abstract: A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.

Abstract translation: 制造半导体器件的方法包括在衬底上形成沟道层，在沟道层上形成牺牲层，在牺牲层上形成硬掩模图案，并使用硬掩模图案作为蚀刻掩模进行图案化处理，形成 通道部分具有​​暴露的顶表面。 通道和牺牲层可由硅锗形成，并且牺牲层的锗含量可高于沟道层的锗含量。