公开(公告)号：US20220320278A1

公开(公告)日：2022-10-06

申请号：US17843105

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin CHOI ,  Hyunchul SONG ,  Sunjung KIM ,  Taegon KIM ,  Seong Hoon JEONG

IPC: H01L29/06 ,  H01L29/08 ,  H01L27/092 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/11

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20210013306A1

公开(公告)日：2021-01-14

申请号：US17028042

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin CHOI ,  Hyunchul SONG ,  Sunjung KIM ,  Taegon KIM ,  Seong Hoon JEONG

IPC: H01L29/06 ,  H01L29/08 ,  H01L27/092 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/11

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20210274121A1

公开(公告)日：2021-09-02

申请号：US17032373

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunjung KIM ,  Sejun KIM ,  Hoyong NA ,  Seongyeop PARK ,  Jihun SHIN ,  Minwoo LEE ,  Youngtae JANG ,  Youngkyun JEONG ,  Jinkyeong HEO

IPC: H04N5/3745 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor includes a dual conversion gain pixel to output a high conversion gain signal according to a high conversion gain and output a low conversion gain signal according to a low conversion gain, by adjusting a conversion gain; a scaler to scale a voltage level of the high conversion gain signal; a ramp generator to generate a first ramp signal and a second ramp signal, slopes of the first and second ramp signals being different from each other; a comparator to compare the scaled high conversion gain signal and the first ramp signal to output a first comparison result, and compare the low conversion gain signal and the second ramp signal to output a second comparison result; and a counter to output a first counting result value based on the first comparison result and output a second counting result value based on the second comparison result.

公开(公告)号：US20240281623A1

公开(公告)日：2024-08-22

申请号：US18615215

申请日：2024-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sihyoung LEE ,  Beomsu KIM ,  Sunjung KIM ,  Soowan KIM ,  Jaehyun KIM ,  Insun SONG ,  Hyunseok LEE ,  Jihwan CHOE

IPC: G06F40/58 ,  G06F40/263 ,  G06V10/10 ,  G06V20/20 ,  G06V20/62 ,  G06V30/148 ,  H04N5/14

CPC classification number: G06F40/58 ,  G06F40/263 ,  G06V10/17 ,  G06V20/20 ,  G06V20/62 ,  G06V20/63 ,  G06V30/153 ,  H04N5/144

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.

公开(公告)号：US20220068688A1

公开(公告)日：2022-03-03

申请号：US17203036

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwanghee JO ,  Dongjoo MOON ,  Siwoong WOO ,  Sunjung KIM ,  Donggil SHIM ,  Huijae KIM ,  Seungdae SEOK

IPC: H01L21/68 ,  H01L21/683 ,  H01L21/677

Abstract: A semiconductor substrate alignment device includes: a lower chuck; a lower chuck driving unit; an upper chuck above and overlapping the lower chuck; observation windows in the upper chuck, imaging units respectively configured to irradiate light through the observation windows and to obtain images by detecting light reflected from the semiconductor substrates; a distance sensor configured to detect a distance between an edge of the lower chuck and an edge of the upper chuck; and a control unit configured to identify first and second alignment keys from images of first and second semiconductor substrates, determine an alignment error value of the first and second semiconductor substrates, and compensate for the alignment error value by driving the lower chuck driving unit.

公开(公告)号：US20200098918A1

公开(公告)日：2020-03-26

申请号：US16693439

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Jong LEE ,  Sanghyuk HONG ,  TaeYong KWON ,  Sunjung KIM ,  Cheol KIM

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L21/8238

Abstract: Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

公开(公告)号：US20190393303A1

公开(公告)日：2019-12-26

申请号：US16243415

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin CHOI ,  Hyunchul SONG ,  Sunjung KIM ,  Taegon KIM ,  Seong Hoon JEONG

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/8238 ,  H01L27/11

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20240244345A1

公开(公告)日：2024-07-18

申请号：US18232000

申请日：2023-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanmin PARK ,  Seonghyeon PARK ,  Kyunghoon KIM ,  Moo Young KIM ,  Sunjung KIM

IPC: H04N25/60 ,  H04N25/77 ,  H04N25/78

CPC classification number: H04N25/60 ,  H04N25/77 ,  H04N25/78

Abstract: An image sensor includes a pixel array including a plurality of pixels; a ramp signal generator configured to generate a ramp signal; a plurality of first attenuators with each first attenuator connected to a respective column of the plurality of pixels, and each first attenuator configured to receive a pixel signal from a respective pixel belonging to a selected row; a plurality of second attenuators with each second attenuator corresponding to a respective column, and each second attenuator configured to receive the ramp signal from the ramp signal generator; and a plurality of analog-to-digital converters configured to output digital signals by comparing first signals output from the plurality of first attenuators and second signals output from the plurality of second attenuators, in which each of the plurality of first attenuators and each of the plurality of second attenuators comprises a first capacitor and a second capacitor.

公开(公告)号：US20210209400A1

公开(公告)日：2021-07-08

申请号：US17207822

申请日：2021-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sihyoung LEE ,  Beomsu KIM ,  Sunjung KIM ,  Soowan KIM ,  Jaehyun KIM ,  Insun SONG ,  Hyunseok LEE ,  Jihwan CHOE

IPC: G06K9/34 ,  G06K9/32 ,  H04N5/14 ,  G06K9/22 ,  G06K9/00 ,  G06F40/58 ,  G06F40/263

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.

公开(公告)号：US20190266432A1

公开(公告)日：2019-08-29

申请号：US16284047

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sihyoung LEE ,  Beomsu KIM ,  Sunjung KIM ,  Soowan KIM ,  Jaehyun KIM ,  Insun SONG ,  Hyunseok LEE ,  Jihwan CHOE

IPC: G06K9/34 ,  G06F17/28 ,  G06K9/32 ,  H04N5/14 ,  G06F17/27

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.