公开(公告)号：US20210036011A1

公开(公告)日：2021-02-04

申请号：US16844429

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan SON ,  Seogoo KANG ,  Jeehoon HAN

IPC: H01L27/11582 ,  G11C8/14 ,  G11C7/18 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11565 ,  H01L29/423

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel structure on a substrate and extending in a first direction perpendicular to a top surface of the substrate; a plurality of gate electrodes on the substrate and spaced apart from one another in the first direction on a sidewall of the channel structure; and a gate insulating layer between each of the plurality of gate electrodes and the channel structure, wherein the channel structure includes a body gate layer extending in the first direction; a charge storage structure surrounding a sidewall of the body gate layer; and a channel layer surrounding sidewall of the charge storage structure.

公开(公告)号：US20210035987A1

公开(公告)日：2021-02-04

申请号：US16844234

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haemin LEE ,  Jongwon KIM ,  Shinhwan KANG ,  Kohji KANAMORI ,  Jeehoon HAN

IPC: H01L27/1157 ,  H01L27/11578 ,  H01L27/11521 ,  H01L27/11556

Abstract: A semiconductor device includes a first stack group having first interlayer insulating layers and first gate layers, alternately and repeatedly stacked on a substrate and a second stack group comprising second interlayer insulating layers and second gate layers, alternately and repeatedly stacked on the first stack group. Separation structures pass through the first and second stack groups and include a first separation region and a second separation region. A vertical structure passes through the first and second stack groups and includes a first vertical region and a second vertical region. A conductive line is electrically connected to the vertical structure on the second stack group. A distance between an upper end of the first vertical region and an upper surface of the substrate is greater than a distance between an upper end of the first separation region and an upper surface of the substrate.