公开(公告)号：US11591518B2

公开(公告)日：2023-02-28

申请号：US17187926

申请日：2021-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  H01L51/50 ,  H05B33/14 ,  B82Y20/00 ,  C09K11/02 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11569468B2

公开(公告)日：2023-01-31

申请号：US17193283

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US11424425B2

公开(公告)日：2022-08-23

申请号：US17062162

申请日：2020-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

IPC: H01L51/50 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.

公开(公告)号：US11193061B2

公开(公告)日：2021-12-07

申请号：US16196117

申请日：2018-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/56 ,  H01L51/50

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US10978657B2

公开(公告)日：2021-04-13

申请号：US16549430

申请日：2019-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US09816725B2

公开(公告)日：2017-11-14

申请号：US14540435

申请日：2014-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Chul Kwon ,  Sung Woo Kim ,  Euy Sung Chu ,  Jee Yong Kim

IPC: F28F3/00 ,  F24F12/00 ,  F28D9/00 ,  F28F9/00

CPC classification number: F24F12/006 ,  F28D9/00 ,  F28D9/0062 ,  F28F9/001 ,  Y02B30/16 ,  Y02B30/563

Abstract: A heat exchanger usable with a ventilator, the heat exchanger having an improved structure so that air passing through the heat exchanger may be prevented from leaking. The heat exchanger of the general inventive concept includes a heat-exchanging element having a plurality of liners stacked in a uniformly spaced state and a plurality of spacers disposed between the liners to define air passages, and corner guides respectively coupled to corners of the heat-exchanging element. Each of the corner guides includes a guide channel forming a space to receive the corner of the heat-exchanging element so that the corner guides securely come into close contact with the heat-exchanging element, and to minimize a loosening of the corner guide due to an adhesive applied between the heat-exchanging element and the corner guide.