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公开(公告)号：US11981851B2
公开(公告)日：2024-05-14
申请号：US18054687
申请日：2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang , Yong Seok Han , Heejae Chung
IPC: C09K11/88 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
CPC classification number: C09K11/883 , H10K50/115 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2002/01 , C01P2002/74 , C01P2004/30 , C01P2004/64 , C01P2004/80
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号：US11793011B2
公开(公告)日：2023-10-17
申请号：US17387281
申请日：2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Tae Ho Kim , Eun Joo Jang , Hongkyu Seo , Sang Jin Lee , Dae Young Chung , Oul Cho
IPC: H10K50/115 , H10K50/11 , H10K50/81 , H10K50/82 , H10K50/17 , H10K50/18 , H10K101/40 , H10K101/30 , H10K71/00 , H10K50/15 , H10K71/12 , H10K85/10 , H10K102/00
CPC classification number: H10K50/115 , H10K50/11 , H10K50/171 , H10K50/81 , H10K50/82 , H10K71/00 , H10K50/15 , H10K50/17 , H10K50/18 , H10K71/12 , H10K85/115 , H10K85/1135 , H10K2101/30 , H10K2101/40 , H10K2102/00 , H10K2102/331 , H10K2102/351 , H10K2102/361
Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
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公开(公告)号：US11566176B2
公开(公告)日：2023-01-31
申请号：US16851495
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee Lee , Hyo Sook Jang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang , Yong Seok Han
Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
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公开(公告)号：US11476434B2
公开(公告)日：2022-10-18
申请号：US17085923
申请日：2020-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heejae Lee , Moon Gyu Han , Sung Woo Kim , Tae Ho Kim , Kun Su Park , Eun Joo Jang , Dae Young Chung
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and a light emitting layer disposed between the first electrode and the second electrode, where the light emitting layer includes a first light emitting layer including a first quantum dot and a second light emitting layer including a second quantum dot and an n-type metal oxide.
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5.发明授权公开(公告)号：US11180694B2
公开(公告)日：2021-11-23
申请号：US16851625
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee Lee , Hyun A Kang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11011720B2
公开(公告)日：2021-05-18
申请号：US16298357
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung Kim , Sung Woo Kim , Jin A Kim , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Oul Cho
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.
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公开(公告)号：US11011673B2
公开(公告)日：2021-05-18
申请号：US16442926
申请日：2019-06-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kun Su Park , Tae Ho Kim , Sung Woo Kim , Chan Su Kim , Tae Hyung Kim , Eun Joo Jang
Abstract: A quantum dot device including a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layer, and a display device. Zn1-xMxO Chemical Formula 1 In Chemical Formula 1, M and x are the same as described in the detailed description.
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公开(公告)号：US10954441B2
公开(公告)日：2021-03-23
申请号：US16298276
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung Kim , Jeong Hee Lee , Sung Woo Kim , Jin A Kim , Yuho Won , Eun Joo Jang
Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
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9.发明授权公开(公告)号：US10647917B2
公开(公告)日：2020-05-12
申请号：US16170493
申请日：2018-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee Lee , Hyun A Kang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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10.发明授权公开(公告)号：US12114518B2
公开(公告)日：2024-10-08
申请号：US17511706
申请日：2021-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Chan Su Kim , Tae Ho Kim , Kun Su Park , Eun Joo Jang , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee
CPC classification number: H10K50/11 , H10K30/10 , H10K50/115 , H10K50/15 , H10K50/16 , H10K85/649
Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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