公开(公告)号：US20170338402A1

公开(公告)日：2017-11-23

申请号：US15157795

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer on the non-magnetic barrier layer and the magnetic free layer on the non-magnetic barrier layer, forming an oxide cap layer on the magnetic free layer, and forming a noble metal cap layer on the oxide cap layer.

公开(公告)号：US09799823B1

公开(公告)日：2017-10-24

申请号：US15094059

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Junghyuk Lee ,  Luqiao Liu ,  Jeong-Heon Park

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.

公开(公告)号：US20170294573A1

公开(公告)日：2017-10-12

申请号：US15094064

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Younghyun Kim ,  Daniel C. Worledge

IPC: H01L43/08 ,  H01L27/24 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.